Zobrazeno 1 - 7
of 7
pro vyhledávání: '"E. J. Bawolek"'
Autor:
Joseph T. Smith, Michael Marrs, Barry O'Brien, Mark Strnad, Emmett Howard, J. Blain Christen, E. J. Bawolek, Yong Kyun Lee, Michael Goryll
Publikováno v:
Electronics Letters. 51:1312-1314
How the application of commercial (thin film) flat panel display technology, used in the production of flexible displays and flexible digital X-ray detectors, can also be applied to reduce the manufacturing cost of wearable biomedical devices, as wel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01614d39f9d1b7144f92d59c7649101c
https://doi.org/10.1049/el.2015.1497
https://doi.org/10.1049/el.2015.1497
Autor:
E. J. Bawolek, Michael Marrs, Curtis D. Moyer, Jovan Trujillo, Gregory B. Raupp, Bryan D. Vogt, Rita Cordova
Publikováno v:
IEEE Transactions on Electron Devices. 58:3428-3434
Amorphous oxide semiconductor thin-film transistors on flexible plastic substrates typically suffer from performance and stability issues related to the maximum processing temperature limitation of the polymer. A novel device architecture based on a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ffe605424558104d922d18d0e6b201d
https://doi.org/10.1109/ted.2011.2161764
https://doi.org/10.1109/ted.2011.2161764
Autor:
E. J. Bawolek, Korhan Kaftanoglu, Sameer M. Venugopal, Michael Marrs, David R. Allee, Doug Loy, Aritra Dey
Publikováno v:
Journal of Display Technology. 7:339-343
Mixed-oxide thin-film transistors (TFTs) have been extensively researched due to their improved stability under electrical bias stress compared to amorphous-silicon TFTs. However, there are many challenges before they can reach the manufacturing stag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::042a485b703c3f4d7396d8a32f4eff95
https://doi.org/10.1109/jdt.2011.2107879
https://doi.org/10.1109/jdt.2011.2107879
Autor:
Lawrence T. Clark, E. J. Bawolek, Daniel Toy, Zi Li, David R. Allee, R. Shringarpure, Sameer M. Venugopal
Publikováno v:
IEEE Transactions on Electron Devices. 54:1781-1783
This brief presents a novel approach to modeling gate bias-induced threshold-voltage (Vth) degradation in hydrogenated amorphous silicon thin-film transistors (TFTs). The Vth degradation model is added to the SPICE 3.0 TFT device model to obtain a co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5d477b7b509ceaed73d821d7f7e708b
https://doi.org/10.1109/ted.2007.899667
https://doi.org/10.1109/ted.2007.899667
Autor:
E. J. Bawolek, E. D. Hirleman
Publikováno v:
Surface Roughness and Scattering.
We report angle resolved light scattering characteristics of individual polystyrene spheres on silicon and on a 91.5 nm thick film of oxide on silicon. Scattering was measured as a function of polarization using a He-Ne laser at a 45 degree incident
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::209aed01e915bd0b50a6ff809d924a35
https://doi.org/10.1364/surs.1992.pd3
https://doi.org/10.1364/surs.1992.pd3
Publikováno v:
Surface Roughness and Scattering.
Optical scatter measurements from polysilicon surfaces were performed using 632.8 nm illumination at 45 degrees and 488 nm illumination at 76.8 degrees. Scatter was recorded up to 60 degrees from the specular beam. Results are compared with surface s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad636c557b3c5ef87b89e755b5879431
https://doi.org/10.1364/surs.1992.pd2
https://doi.org/10.1364/surs.1992.pd2
Autor:
E. J. Bawolek, Michael Hack, Yong Kyun Lee, Shawn M. O'Rourke, Doug Loy, Curt Moyer, Julie J. Brown, David C. Morton, Eric Forsythe, Nick Colaneri, Mark Richards, Kamala Rajan, Cynthia Bell, Jeff Silvernail, Sameer M. Venugopal, Michael Marrs, Jann Kaminski, Ruiqing Ma, Scott K. Ageno
Publikováno v:
SID Symposium Digest of Technical Papers. 40:988
A low temperature, 180 °C, amorphous Si (a-Si:H) process on bonded polyethylene naphthalate substrates is discussed and a 4.1-inch QVGA active matrix (AM) phosphorescent OLED display is demonstrated. The n-channel thin-film transistors (TFTs) exhibi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ab4397f70c4f67dcbbfa1db6ccd426c
https://doi.org/10.1889/1.3256966
https://doi.org/10.1889/1.3256966