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Autor:
Lew Goldberg, James R. Lindle, Chih-Hsiang Lin, P.C. Chang, Christopher L. Felix, J. I. Malin, D. Zhang, S. J. Murry, Rui Q. Yang, Craig A. Hoffman, Shin-Shem Pei, Jerry R. Meyer, E. J. Bartoli
Publikováno v:
Journal of Electronic Materials. 26:440-443
We report optically pumped four-constituent InAs/InGaSb/InAs/AlSb type-II quantum-well lasers emitting at 3.2–4.1 μm. Lasing was observed up to 350K under pulsed operation, with a characteristic temperature T0 up to 68K at temperatures above ambie