Zobrazeno 1 - 10
of 412
pro vyhledávání: '"E. I. Terukov"'
Autor:
A. A. Ershov, K. N. Chekmezov, A. P. Burovikhin, A. A. Nikitin, S. N. Abolmasov, A. A. Stashkevich, E. I. Terukov, A. V. Eskov, A. A. Semenov, A. B. Ustinov
Publikováno v:
Известия высших учебных заведений России: Радиоэлектроника, Vol 27, Iss 2, Pp 119-131 (2024)
Introduction. Silicon nitride is a highly promising material for fabrication of photonic integrated circuits (PICs). Plasma-enhanced chemical vapor deposition is a prospective method for large-scale industrial production of silicon nitride-based PICs
Externí odkaz:
https://doaj.org/article/93639c18cdc94154ba7fc8c3554e925f
Publikováno v:
Глобальная ядерная безопасность, Vol 0, Iss 4, Pp 11-21 (2023)
The problems of ensuring the safety of operation of nuclear power plants are always paid increased attention. In addition to the self-contained diesel generator sets used to maintain the operation of safety systems in case of loss of external power s
Externí odkaz:
https://doaj.org/article/f08bdfb9c8b240cd9f31469497875d97
Autor:
N. A. Chuchvaga, J. Schulze, V. V. Klimenov, K. S. Zholdybayev, K. P. Aimaganbetov, S. R. Zhantuarov, A. S. Serikkanov, E. I. Terukov, S. Zh. Tokmoldin, N. S. Tokmoldin
Publikováno v:
Известия высших учебных заведений России: Радиоэлектроника, Vol 23, Iss 5, Pp 57-62 (2020)
Introduction. Heterojunction silicon solar cells represent one of the most promising directions for the development of solar photovoltaics. This is due to both their high power conversion efficiency and reasonable likelihood for further growth in per
Externí odkaz:
https://doaj.org/article/c1c668ebcae54d1a873713b88a1ae647
Autor:
V. P. Afanasiev, E. I. Terukov
Publikováno v:
Известия высших учебных заведений России: Радиоэлектроника, Vol 0, Iss 2, Pp 106-113 (2016)
Solar energy is one of the most promising sectors of renewable energy. In Russia the mass development of solar energy in connection with the organization launched in February 2015 at "Hevel" production of thin film solar modules based on amorphous si
Externí odkaz:
https://doaj.org/article/06a454d3b6784bbeaeda8c8a55ccd241
Publikováno v:
JETP Letters. 116:859-862
Coherent terahertz radiation has been generated in p–n heterostructures based on a-Si:H/a-SiC:H/c-Si excited by 800-nm femtosecond laser pulses at room temperature. Terahertz radiation is generated when a reverse bias voltage is applied to heterost
Publikováno v:
Glass Physics and Chemistry. 48:363-371
Autor:
E. V. Malchukova, E. I. Terukov
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 86:797-801
Publikováno v:
Applied Solar Energy. 58:330-333
Publikováno v:
High Temperature. 60:15-18
Autor:
S.R. Zhantuarov, E. I. Terukov, N. Zh. Almasov, N.S. Tokmoldin, A. Aldiyarov, K.P. Aimaganbetov
Publikováno v:
Instruments and Experimental Techniques. 64:886-890