Zobrazeno 1 - 3
of 3
pro vyhledávání: '"E. I. Nekhaeva"'
Autor:
L. S. Parshina, B. A. Aronzon, A. V. Kochura, E. I. Nekhaeva, A. I. Dmitriev, A. P. Kuz’menko, O. A. Novodvorskii, E. P. Kochura, Olga D. Khramova, A. L. Vasil’ev
Publikováno v:
Physics of the Solid State. 62:241-245
Magnetic properties of two-phase granular semiconductor–ferromagnet GaSb–MnSb films obtained by pulsed laser deposition as a function of growth temperature and postgrowth annealing were stu-died.
Autor:
L. N. Oveshnikov, E. I. Nekhaeva
Publikováno v:
Semiconductors. 51:1313-1320
Magnetotransport in heterostructures with spatial separation of the Mn magnetic impurity and an InGaAs quantum well is studied. An analysis of the observed effect of weak localization using the Hikami–Larkin–Nagaoki formula leads to an anomalousl
Autor:
B. A. Aronzon, Yu. G. Selivanov, E. I. Nekhaeva, A. Yu. Kuntsevich, V. A. Prudkoglyad, L. N. Oveshnikov, E. G. Chizhevskii
Publikováno v:
JETP Letters. 104:629-634
The magnetoconductivity of thin Bi2Se3 films covered by a protective Se layer and grown at (111) BaF2 substrates is studied. It is shown that the negative magnetoconductivity observed at low magnetic fields and caused by the effect of weak antilocali