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pro vyhledávání: '"E. I. Kladova"'
Publikováno v:
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 24:27-33
A theoretical model has been developed that allows one to determine free electron density in n-GaAs from the characteristic points on far-infrared reflection spectra. It was shown that, in this case, it is necessary to take into account the plasmon-p
Autor:
Dmitry Khokhlov, Yu. V. Ryabchikov, M. A. Dronov, E. I. Kladova, E. V. Tikhonov, L. I. Belogorokhova, Larisa G. Tomilova, N. V. Pashkova, I. A. Belogorokhov
Publikováno v:
Semiconductors. 45:1457-1461
The transport properties of organic semiconductors based on europium diphthalocyanine and bitris-phthalocyanine complexes with ortho-bis(oxymethyl)phenyl bridge and based on europium and erbium dinaphthalocyanine are studied. The temperature dependen