Zobrazeno 1 - 8
of 8
pro vyhledávání: '"E. I. Kafedjiiska"'
Autor:
Ion N. Mihailescu, A. Szekeres, Eniko Gyorgy, E. I. Kafedjiiska, Carmen Ristoscu, S. Simeonov
Publikováno v:
Journal of Applied Physics. 90:860-865
The I–V characteristics of the n+-p Si junction diodes prepared by laser annealing of a p-type Si substrate, covered by a Si–P thin film, were measured in the 77–294 K temperature range. The I–V characteristics of these diodes were found to b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7f0981a63dc31a4b354a4823ce67df1
https://doi.org/10.1063/1.1378330
https://doi.org/10.1063/1.1378330
Publikováno v:
Semiconductor Science and Technology. 9:1795-1799
Deep levels created by hydrogen and oxygen plasma treatment in n-type Si substrates are investigated using deep-level transient spectroscopy (DLTS) in the temperature range 77-300 K. It has been established that both types of plasma treatment at temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e4e564521f9ddb61acc07f86953d998
https://doi.org/10.1088/0268-1242/9/10/007
https://doi.org/10.1088/0268-1242/9/10/007
Publikováno v:
Physica Status Solidi (a). 140:K25-K29
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93918e0d1d347af18ab949c4450184ba
https://doi.org/10.1002/pssa.2211400134
https://doi.org/10.1002/pssa.2211400134
Publikováno v:
Physica Status Solidi (a). 136:393-400
A more accurate approximation for the diffusion velocity in the space-charge layer of Schottky diodes is obtained. The influence of the dependence of the diffusion velocity on the applied voltage to the slope of I–V characteristics, calculated by t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5b9f3c4d41ef3ce64b70e996996f578
https://doi.org/10.1002/pssa.2211360212
https://doi.org/10.1002/pssa.2211360212
Publikováno v:
physica status solidi (a). 122:K147-K150
Les niveaux profonds aux complexes de lacunes donneuses sont des centres de generation-recombinaison. L'influence observee du bombardement des substrats de Si, avec des ions Ar de 1 keV, s'explique par la generation de tels niveaux profonds dans les
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95425169e5f8efa2d4a6d3c1bce1076b
https://doi.org/10.1002/pssa.2211220253
https://doi.org/10.1002/pssa.2211220253
Publikováno v:
International Journal of Electronics. 48:511-517
Molybdenum layers are deposited on GaAs by MoCl6 reaction with H2. During the deposition the GaAs substrates are heated to 400°C. The forward current of prepared Mo-(n)GaAs structure increases over five decades in accordance with the relation J=J0 e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb4a163fd1d8d37ff7c24403feb3e4c5
https://doi.org/10.1080/00207218008901133
https://doi.org/10.1080/00207218008901133
Publikováno v:
Thin Solid Films. 115:291-298
Molybdenum layers were deposited onto silicon substrates at 400 °C by the reaction of MoCl 5 with H 2 . The electron barrier height at the Mo-Si interface is 0.7 eV. The Mo/Si diodes display nearly ideal characteristics including a reverse current i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55e33f106f3e7c39035a7b1a2f633a52
https://doi.org/10.1016/0040-6090(84)90092-0
https://doi.org/10.1016/0040-6090(84)90092-0
Publikováno v:
Solar Cells. 20:99-118
Expressions for the concentration of the minority and majority carriers in the illuminated space charge layer of Schottky barrier structures are obtained. The dark current and the photocurrent are determined from the minority and majority carrier con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c28d195e310caba13bc079c555642edb
https://doi.org/10.1016/0379-6787(87)90035-4
https://doi.org/10.1016/0379-6787(87)90035-4