Zobrazeno 1 - 10
of 45
pro vyhledávání: '"E. I. Givargizov"'
Autor:
N. N. Sheftal', E. I. Givargizov
For 50 years the Fedorov Institute of Crystallography, Mineralogy, and Petrography at Leningrad Mining Institute has held annual memorial meetings for E. S. Fedorov. Immediate ly after the jubilee meeting (May 21-24, 1969), the Fedorov All-Union Sy
Autor:
Tatiana Tumareva, Vyacheslav Sezonov, G. G. Sominski, A. N. Stepanova, E. P. Taradaev, E. I. Givargizov
Publikováno v:
2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).
The miniature cold field emitters are very attractive for utilization in low-power gyrotrons operating in range of short millimeter and terahertz waves and using for plasma diagnostics. Two types of developing and investigating cold field emitters pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac039d805f435d67c0f7ca20036c7361
https://doi.org/10.1109/irmmw-thz.2013.6665419
https://doi.org/10.1109/irmmw-thz.2013.6665419
Autor:
E. I. Givargizov, V. V. Safronov
Publikováno v:
Trends in Colloid and Interface Science VII ISBN: 9783798509559
10. Hearn J, Wilkinson MC, Goodall AR (1981) Adv Colloid Interface Sci 14:173 11. Somasundaran P, Kulkarni RD (1973) J Colloid Interface Sci 45:591 12. Wnek WJ, Gidaspow D, Wasan DT (1975) J Colloid Interface Sci 50:609 13. Chowdiah P, Wasan DT, Gida
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9386247f3ade1e1d00808c9e79d765ad
https://doi.org/10.1007/bfb0118603
https://doi.org/10.1007/bfb0118603
Autor:
A. N. Stepanova, K. Christensen, E. I. Givargizov, John J. Hren, Jed Liu, U. T. Son, Klaus J. Bachmann
Publikováno v:
[Proceedings] IVMC '93 Sixth International Vacuum Microelectronics Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52d1e44f2f2facf23e6fc538e62bf913
https://doi.org/10.1109/ivmc.1993.700258
https://doi.org/10.1109/ivmc.1993.700258
Publikováno v:
9th International Vacuum Microelectronics Conference.
Large-area arrays of Si tips (10/sup 3/-10/sup 6/ tips in an array) with diamond coating were tested in pulse and DC modes. The arrays demonstrated uniform emission, reproducible I-V plots and low emission threshold. The maximum current achieved with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::096cb3b2b3200ab8e99bea47ad13a8c8
https://doi.org/10.1109/ivmc.1996.601824
https://doi.org/10.1109/ivmc.1996.601824
Publikováno v:
Physical and Technical Problems of SOI Structures and Devices ISBN: 9789401040525
Perfection of SOI Films prepared by different technologies play a crucial role in choosing of a given approach for an actual application. Possibilities to control the perfection of ZMR-SOI films are considered. Investigations in graphoepitaxy and in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7622ddd45903a48d294e8ace9b6cdbf
https://doi.org/10.1007/978-94-011-0109-7_3
https://doi.org/10.1007/978-94-011-0109-7_3
Autor:
E. I. Givargizov, E. A. Krivandina
Publikováno v:
Crystallography Reports. 47:S1-S2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fff1d1381a26a3e2c41e11a39d641ab
https://doi.org/10.1134/1.1529953
https://doi.org/10.1134/1.1529953
Autor:
G. W. Wojak, K. Christensen, Jiang Liu, U. T. Son, A. N. Stepanova, Klaus J. Bachmann, E. I. Givargizov, John J. Hren
Publikováno v:
MRS Proceedings. 311
Thin films of silicon carbide have been formed on silicon field emitters by chemical reaction with ethylene (C2H4) at temperatures of 850 to 950°C using ethylene gas pressures up to 5×10-3 Torr. By controlling the reaction time and temperature, we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9412dac104e341ebb50062b5aa5ab53f
https://doi.org/10.1557/proc-311-21
https://doi.org/10.1557/proc-311-21
Publikováno v:
MRS Proceedings. 283
Results of experiments on crystallization of thin (50 to 200 nm) amorphous Si films initially deposited onto glass substrates by different techniques (PECVD, LPCVD) and treated by different lasers (argon, excimer, or Cu-vapor) are given. The films tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1946d6707e956b3a783f107840fd9cff
https://doi.org/10.1557/proc-283-751
https://doi.org/10.1557/proc-283-751
Autor:
E. I. Givargizov
Publikováno v:
Oriented Crystallization on Amorphous Substrates ISBN: 9781489925626
Chapters 3, 4, and 5 described a variety of approaches, methods, and techniques that allow preparation of silicon films (and, in general, semiconductor films) on amorphous substrates by means of crystallization processes. In view of the broad interes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac1670d3236db91aefab5da22296852b
https://doi.org/10.1007/978-1-4899-2560-2_7
https://doi.org/10.1007/978-1-4899-2560-2_7