Zobrazeno 1 - 10
of 25
pro vyhledávání: '"E. I. Gatskevich"'
Publikováno v:
Technical Physics Letters. 41:21-24
Heating, melting, and crystallization processes of SiGe solid solution on a silicon substrate occurring under the influence of nanosecond laser irradiation were numerically simulated. Formation of cellular structures during solidification of the bina
Autor:
Zh. V. Smagina, G. D. Ivlev, E. I. Gatskevich, V. L. Malevich, A. V. Dvurechenskii, V. A. Zinoviev
Publikováno v:
Journal of Experimental and Theoretical Physics. 115:436-444
The kinetics of phase transformations of nanocrystals in a crystal matrix is considered upon non-stationary heating by laser pulses. The melting and crystallization kinetics of nanocrystals is described taking into account their size, shape, elementa
Publikováno v:
Journal of Engineering Physics and Thermophysics. 85:210-215
The possibilities for the photoemission method of measuring the temperature of various materials heated by millisecond laser pulses have been investigated. The temperature of graphite, tungsten, tantalum, silicon plates, and silicon dioxide films was
Autor:
Alexander A. Ezhov, S. V. Zabotnov, P. A. Perminov, G. D. Ivlev, Leonid A. Golovan, Pavel K. Kashkarov, E. I. Gatskevich, V. L. Malevich, I. O. Dzhun
Publikováno v:
Laser Physics. 21:801-804
The method for the formation of silicon nanoparticles by picosecond laser pulses is studied upon the surface irradiation of the single-crystal silicon in various liquids. The ablation products are investigated using the atomic-force microscopy and Ra
Publikováno v:
Measurement Techniques. 53:1376-1379
The results of an investigation of the temperature dynamics of certain metals, measured by a photoemission method with a time resolution of 1 μsec, when they are heated in air and in an argon medium by millisecond laser radiation (λ = 1.06 μm) wit
Autor:
R. M. Bayazitov, D. L. Goroshko, Konstantin N. Galkin, Peter I. Gaiduk, G. D. Ivlev, E. A. Chusovitin, N. G. Galkin, E. I. Gatskevich, V. F. Valeev, R. I. Batalov
Publikováno v:
Physics Procedia. 11:43-46
In this work buried nanocrystalline CrSi2 layers were synthesized by ion implantation, pulsed annealing and MBE. The structural, optical and thermoelectrical properties of CrSi2 layers were studied by methods of SEM, TEM, RBS, PL and Seebeck coeffici
Autor:
D. I. Kryzhkov, P. I. Gajduk, G. D. Ivlev, Eduardo Alves, E. I. Gatskevich, Carlos Marques, R. M. Bayazitov, R. I. Batalov
Publikováno v:
Journal of Applied Spectroscopy. 76:209-214
The dynamics of phase transitions induced by nanopulsed ruby laser radiation (80 nsec, 2 J/cm 2 ) both in silicon layers doped with erbium ions and in those containing doped erbium and oxygen have been studied by an optical probing method. It is show
Autor:
E. I. Gatskevich, Vladimir A. Volodin, A. I. Nikiforov, M. D. Efremov, G. Yu. Mikhalev, G. D. Ivlev, A. I. Yakimov, A. V. Dvurechenskiĭ
Publikováno v:
Semiconductors. 40:202-209
The goal of this study was the development of a method for the modification of a quantum dot (QD) structure in Ge/Si nanostructures by pulsed laser irradiation. The Ge x Si 1 - x QD structures were analyzed using data furnished by Raman spectroscopy.
Publikováno v:
Applied Surface Science. 248:259-263
Kinetics of laser-induced phase transitions in CdTe has been studied by in situ (during laser processing) and ex situ (before and after laser irradiation) methods. The samples were irradiated in air by a ruby laser with pulse duration of 80 ns and en
Publikováno v:
Computational Materials Science. 31:389-404
A model of melting, evaporation and solidification of CdZnTe pseudobinary alloy due to pulsed laser irradiation is formulated using the mass and internal energy balances in the liquid and solid phases, the vapor being assumed to be removed from the s