Zobrazeno 1 - 5
of 5
pro vyhledávání: '"E. I. Cole"'
Publikováno v:
Journal of Applied Physics. 62:4909-4915
A scanning electron microscope was used in the voltage contrast mode to examine the relationship between dynamic secondary electron emission from passivated devices and buried structure depth. A primary electron beam energy of 500 eV was used. Depth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::881e37452a3def4eb2fdcb1e742f28f1
https://doi.org/10.1063/1.338999
https://doi.org/10.1063/1.338999
Publikováno v:
Physica D: Nonlinear Phenomena. 34:449-455
We report the first experiments and digital simulation of two regimens of low-dimensional chaotic behavior in the current-voltage (I–V) curves of a silicon controlled rectifier (SCR). In one regimen of applied voltages and currents, the observed at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67e765445b02665facfb5dc8ac212bd1
https://doi.org/10.1016/0167-2789(89)90268-6
https://doi.org/10.1016/0167-2789(89)90268-6
Autor:
F.A. DiBianca, E. I. Cole Jr., D.G. Johnson, C. R. Bagnell, R. H. Propst, C.A. Smith, W.V. Oxford
Publikováno v:
IEEE Transactions on Electron Devices. 33:282-285
Semiconductor device path resistance is obtained from scanning electron microscope (SEM) images using a modified electron-beam-induced current (EBIC) mode. We call this new method resistance contrast imaging (RCI). The intensity of these images is pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7085daf553a421db9b85975e3669bbc6
https://doi.org/10.1109/t-ed.1986.22479
https://doi.org/10.1109/t-ed.1986.22479
Autor:
Roy H. Propst, C. Robert Bagnell, Craig A. Smith, E. I. Cole, Darryl G. Johnson, William V. Oxford, Brian Davies, Frank A. DiBianca
The scanning electron microscope (SEM) is considered as a tool for both failure analysis as well as device characterization. A survey is made of various operational SEM modes and their applicability to image processing methods on semiconductor device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c35f3303a66c04fb4a9ec068e306dec2
https://doi.org/10.1016/b978-081551171-7.50005-6
https://doi.org/10.1016/b978-081551171-7.50005-6
Autor:
Darryl G. Johnson, William V. Oxford, C. R. Bagnell, E. I. Cole, Craig A. Smith, Roy H. Propst, Frank A. DiBianca
Publikováno v:
Applied Physics Letters. 48:599-600
A scanning electron microscope is used in the voltage contrast mode to examine dynamic voltages on passivated integrated circuits. At low primary electron beam energies negative voltage transients produce a capacitive coupling voltage contrast flash
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7522167ff667155828bc70382dc8efbb
https://doi.org/10.1063/1.96479
https://doi.org/10.1063/1.96479