Zobrazeno 1 - 10
of 25
pro vyhledávání: '"E. I. Chen"'
Autor:
Y Yang, Z H I X I Yu, W E I W E I Chen, X I A O Y U Wang, K E X I N Peng, W E I S I Yin, Y I L I N Pan, B E I B E I Du, P I N G Yang
Publikováno v:
European Heart Journal: Acute Cardiovascular Care. 12
Funding Acknowledgements Type of funding sources: Public grant(s) – National budget only. Main funding source(s): National Natural Science Foundation of China (NSFC). Introduction Numerous epidemiologic studies have confirmed that Standard Modifiab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8abe4f84cb2da42bd08e6d965bd41c01
https://doi.org/10.1093/ehjacc/zuad036.046
https://doi.org/10.1093/ehjacc/zuad036.046
Autor:
E. I. Chen, G. E. Hofler, Fred A. Kish, D. A. Vanderwater, T. D. Ostentowski, J.-W. Huang, I. H. Tan
Publikováno v:
Journal of Electronic Materials. 29:188-194
The AlGaInP/GaP wafer-bonded transparent-substrate (TS) light-emitting diodes (LEDs) have been shown to exhibit luminous efficiencies exceeding many conventional lightning sources including 60 W incandescent sources. This paper will demonstrate the f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f6611f0cc7d33fa82f166ca15029a77
https://doi.org/10.1007/s11664-000-0140-2
https://doi.org/10.1007/s11664-000-0140-2
Publikováno v:
Journal of Applied Physics. 79:8204-8209
Data are presented on the photopumped laser operation of planar AlAs–GaAs superlattice (SL) minidisk lasers. The SL minidisk (70 A AlAs, 30 A GaAs; 100 periods; ∼37 μm diameter) is defined by impurity‐induced layer disordering (IILD), followed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51738b957b9cd0bf854607b521c07063
https://doi.org/10.1063/1.362460
https://doi.org/10.1063/1.362460
Publikováno v:
Journal of Applied Physics. 74:797-801
Data are presented on the 300 K (and 77 K) continuous photopumped laser operation of AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum‐well heterostructures (QWHs) that have been oxidized (H2O vapor+N2, 425 °C) selectively along the high‐band‐gap het
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3380985d7831d87dd51cf34805691cbd
https://doi.org/10.1063/1.354868
https://doi.org/10.1063/1.354868
Autor:
C. P. Kocot, D. Collins, F. A. Kish, P.N. Grillot, T. S. Tan, E. I. Chen, I.-H. Tan, Gloria E Hofler, M. Ochiai-Holcomb, Nathan F. Gardner, M. G. Craford, Michael R. Krames, S. A. Stockman, M. Hueschen, G. Sasser, Carrie Carter-Coman, B. Loh, Herman C Chui, J. Posselt, J.-W. Huang
Publikováno v:
Applied Physics Letters. 75:2365-2367
A truncated-inverted-pyramid (TIP) chip geometry provides substantial improvement in light extraction efficiency over conventional AlGaInP/GaP chips of the same active junction area (∼0.25 mm2). The TIP geometry decreases the mean photon path-lengt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ea4424496945593d499fc3700a21ec8
https://doi.org/10.1063/1.125016
https://doi.org/10.1063/1.125016
Autor:
T. S. Tan, S. A. Stockman, Nathan F. Gardner, J.-W. Huang, F. A. Kish, Michael R. Krames, Herman C Chui, C. P. Kocot, N. Moll, E. I. Chen
Publikováno v:
Applied Physics Letters. 74:2230-2232
Improvement of 1.4× in the external quantum efficiency and luminous efficiency (lm/W) of transparent-substrate (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes is demonstrated. The improvement is accomplished by reducing the thickness of the active l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47dac76a2304ee20cf7bf28a84f77d1c
https://doi.org/10.1063/1.123810
https://doi.org/10.1063/1.123810
Publikováno v:
Applied Physics Letters. 69:2882-2884
Data are presented demonstrating double injection and negative resistance in stripe‐geometry oxide‐aperture AlyGa1−yAs–GaAs–InxGa1−xAs quantum well heterostructure lasers. The buried oxide laser structures are defined, in current and cavi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00544f21e1844693204fc9265912003e
https://doi.org/10.1063/1.117350
https://doi.org/10.1063/1.117350
Publikováno v:
Journal of Applied Physics. 79:8829-8831
Data are presented demonstrating the effect that cavity length, and thus Q, has upon quantum well heterostructure edge‐emitting laser diodes that are reduced to microcavity thickness. The lasers, with reduced mode density and enhanced spontaneous e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30ef163f77a359a62844501aee18ec90
https://doi.org/10.1063/1.362562
https://doi.org/10.1063/1.362562
Publikováno v:
Applied Physics Letters. 68:2035-2037
Data are presented demonstrating photopumped laser operation of a planar photonic lattice (∼1 μm thick) that is comprised of 9 μm disks with 2 μm separation arranged in a two‐dimensional hexagonal close‐packed pattern. The active region of e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6b0743bfdc504bf0ad13270d301f977
https://doi.org/10.1063/1.116294
https://doi.org/10.1063/1.116294
Publikováno v:
Applied Physics Letters. 68:1540-1542
Data are presented on the 300 K photopumped (pulsed) laser operation of ultrathin (∼0.15 μm) planar microdisk lasers. The tiny lasers employ the wet oxidation of an AlGaAs layer beneath the disks to form semiconductor cavities that are in solid co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21fc7cdd7ddb4c9f4c9b7a4d1b9670f4
https://doi.org/10.1063/1.115692
https://doi.org/10.1063/1.115692