Zobrazeno 1 - 10
of 103
pro vyhledávání: '"E. Hourdakis"'
Akademický článek
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Publikováno v:
Solid-State Electronics. 196:108408
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79aa0d1f08dee872533e22866681ff94
https://doi.org/10.1016/j.sse.2022.108408
https://doi.org/10.1016/j.sse.2022.108408
Publikováno v:
Journal of Physics D: Applied Physics. 55:455502
Metal–insulator–metal (MIM) micro-capacitors for use in integrated energy storage applications are presented. A new, simple and batch Si processing compatible method for the creation of high aspect ratio metallic 3D structures on the surface of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36b91fbe8f2fa03fb28f1d466e94c4cd
https://doi.org/10.1088/1361-6463/ac914a
https://doi.org/10.1088/1361-6463/ac914a
Publikováno v:
Solid-State Electronics
Solid-State Electronics, Elsevier, 2018, 143, pp.77-82. ⟨10.1016/j.sse.2017.11.003⟩
Solid-State Electronics, 2018, 143, pp.77-82. ⟨10.1016/j.sse.2017.11.003⟩
Solid-State Electronics, Elsevier, 2018, 143, pp.77-82. ⟨10.1016/j.sse.2017.11.003⟩
Solid-State Electronics, 2018, 143, pp.77-82. ⟨10.1016/j.sse.2017.11.003⟩
International audience; Three-dimensional (3D) Si surface nanostructuring is interesting towards increasing the capacitance density of a metal-oxidesemiconductor (MOS) capacitor, while keeping reduced footprint for miniaturization. Si nanowires (SiNW
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ee6f075268bbe8d65d23820313a7a28
https://doi.org/10.1016/j.sse.2017.11.003
https://doi.org/10.1016/j.sse.2017.11.003
Akademický článek
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Publikováno v:
Journal of Applied Physics. 129:203102
A novel concept for a simple, cost effective, readily integrable with Si electronics and self-powered photodetector is presented. The device consists of a semitransparent Au film deposited on an n-type Si substrate with contacts on the Au layer. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e30856f8b890c011c65a47a0e02bbc1b
https://doi.org/10.1063/5.0048655
https://doi.org/10.1063/5.0048655
Publikováno v:
Microelectronic Engineering. :111558
A simple method for the determination of a Si p+/n junction depth is presented. The method is designed to delineate the specific junction due to its importance in the field of Si solar cells where cost effective and fast characterization techniques a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::670f402dc771d0509f7818a1eb0d5251
https://doi.org/10.1016/j.mee.2021.111558
https://doi.org/10.1016/j.mee.2021.111558
Akademický článek
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Publikováno v:
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).
A model system of three-dimensional (3D) Si nanowire (SiNW) Metal-Insulator-Semiconductor (MIS) capacitor arrays with vertical Si nanowires of diameter 430 nm and height 1.35 and 2.5 µm respectively has been fabricated and studied. The gate dielectr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71960234cc4a81dee5d15523c1c1818b
https://doi.org/10.1109/ulis.2017.7962618
https://doi.org/10.1109/ulis.2017.7962618
Publikováno v:
Journal of Applied Physics. 123:215301
Barrier-type anodic alumina thin films are interesting for use in high capacitance density metal-insulator-metal capacitors due to their excellent dielectric properties at small thickness. This thickness is easily controlled by the anodization voltag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7791d8c911fc2a99ca0a7a5b33e60c8c
https://doi.org/10.1063/1.5026166
https://doi.org/10.1063/1.5026166