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Autor:
E. Hintzsche
Publikováno v:
Phosphorus, Sulfur, and Silicon and the Related Elements. 196:859-878
This review describes the synthesis and the reaction behavior of anellated 1,2-dithiins in comparison to non-anellated compounds. Moreover, it focuses on the structure of the cyclic disulfide-molec...
Autor:
G. Jordan, Arthur Weeber, Changming Fang, John H. Harding, Leif E. Hintzsche, Georg Kresse, Martijn Marsman, M.W.P.E. Lamers, Keith T. Butler, Per Erik Vullum
Publikováno v:
Solar Energy Materials and Solar Cells. 120:311-316
Surface passivation by hydrogenated amorphous silicon nitride (a-SiN x :H) is determined by the combined effect of two mechanisms: so-called chemical passivation by reducing the density of interface states ( D it ) and field-effect passivation as a r
Autor:
Martijn Marsman, M. W. P. E. Lamers, Changming Fang, L. E. Hintzsche, Georg Kresse, A. W. Weeber
Publikováno v:
Physical Review Applied. 3
A positive fixed charge at the interface between crystalline silicon and amorphous silicon nitride attracts electrons and repels holes. Although this phenomenon is extensively exploited in high-efficiency solar cells, its atomic-scale origin is not p
Publikováno v:
Tetrahedron. 53:7509-7528
Various thieno[3,2-c] anellated (5a, 26) and dithieno[3,2-c:2,3-e] anellated 1,2-dithiins (32 a-c, 45) were obtained starting from appropriate thiophene precursors. The absorption maxima covered the range from 430 to 467 nm indicating olefinic rather
Autor:
Arthur Weeber, Georg Kresse, Changming Fang, M.W.P.E. Lamers, G. Jordan, Martijn Marsman, L. E. Hintzsche
Publikováno v:
Physical Review B. 88
We present an ab initio density functional theory study of the dominant defects in hydrogenated amorphous silicon nitrides covering different stoichiometries, the influence of hydrogen, and the influence of the annealing history. Whereas nitrogen (N)