Zobrazeno 1 - 10
of 24
pro vyhledávání: '"E. Hempfling"'
Publikováno v:
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials.
The growth and fabrication of high performance InP-channel HEMTs with transconductances as high as 335 mS/mm, low output conductances of 6 mS/mm, and high terminal breakdown voltages are discussed. It is shown that the AlInAs HEMTs have microwave gai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::255033ba755ff4f866ff221a9b797c75
https://doi.org/10.1109/iciprm.1991.147395
https://doi.org/10.1109/iciprm.1991.147395
Publikováno v:
International Technical Digest on Electron Devices.
Summary form only given. The authors report the state-of-the-art RF performance of InAlAs/InP MODFETs, grown for the first time via MBE (molecular beam epitaxy). The S-parameters of the FETs were measured from 0.5 to 26.5 GHz for various bias voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::829ef27095945f9cfeb70d6225b3907c
https://doi.org/10.1109/iedm.1990.237084
https://doi.org/10.1109/iedm.1990.237084
Autor:
S. Ben Amor, R. J. Higgins, E. Hempfling, J. J. L. Rascol, Kevin P. Martin, Robert C. Potter, C. Y. Belhadj, H. Hier
Publikováno v:
Applied Physics Letters. 57:58-60
Using the stable, dc current‐voltage (I‐V) curve measured from a double‐barrier resonant tunneling structure, we have studied the effects of external circuit elements on device oscillations. A simulation, using the experimental I‐V and a simp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8e3d0500468f958b4b16e7066552370
https://doi.org/10.1063/1.103577
https://doi.org/10.1063/1.103577
Publikováno v:
International Conference on Indium Phosphide and Related Materials.
The growth of modulation-doped AlInAs/InP heterostructures with two-dimensional electron gases and the fabrication of the first AlInAs/InP HEMT are reported. Hall measurements and Shubnikov-de Haas oscillations observed in these heterostructures yiel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66aa3e1ab38fca49ab92d07688061431
https://doi.org/10.1109/iciprm.1990.203031
https://doi.org/10.1109/iciprm.1990.203031
Publikováno v:
Electronics Letters. 26:651-652
The fabrication of the first AlInAs/InP HEMT is reported. This device has extrinsic transconductance of 40 mS/mm, gate-drain and drain-source breakdown voltages of 20 V and saturation drain current densities of 0.1 A/mm of gate width. These prelimina
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9043724f5db6cdb1fd8dd1b2cdba86a7
https://doi.org/10.1049/el:19900426
https://doi.org/10.1049/el:19900426
Publikováno v:
IEEE Transactions on Electron Devices. 37:1916-1917
The fabrication and microwave performance of InP/InGaAs heterojunction insulated-gate FETs (HIGFETs) using plasma-enhanced chemical vapor deposition (PECVD)-deposited SiO/sub 2/ as the gate insulator are discussed. Extrinsic transconductances as high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07c09cae874768e5d2fde61d025928c1
https://doi.org/10.1109/16.57144
https://doi.org/10.1109/16.57144
Publikováno v:
Electronics Letters. 26:1912
AlInAs/InP HEMTs with extrinsic transconductances of 267 mS/mm at 300 K and 342 mS/mm at 77 K are reported. The corresponding intrinsic transconductance at 300 K is estimated to be 615 mS/mm. These 0.80 μm gate length devices also exhibit high micro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3926d2e5b17575b941aca741b49bcbd4
https://doi.org/10.1049/el:19901231
https://doi.org/10.1049/el:19901231
Publikováno v:
IEEE Electron Device Letters. 9:223-225
Lattice-matched InAlAs/n-InP and InAlAs/n/sup +/-InP heterostructure MESFETs with extrinsic transconductances of 220 and 155 mS/mm, respectively, have been fabricated on semi-insulating InP substrates. Maximum stable gains of 11.5 dB for the 1.25- mu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::961cdb60cbf2cea74d52771705f5e62d
https://doi.org/10.1109/55.697
https://doi.org/10.1109/55.697
Autor:
O. Aina, E. Hempfling, T. Loughran, J. Abrahams, Ayub Fathimulla, H. Hier, M. Mattingly, W. Reif, J. O’Connor
Publikováno v:
1987 International Electron Devices Meeting.
This paper reports the fabrication and microwave performance of MODFETs (InGaAs/InAlAs) and two types of heterojunction MESFETs (undoped InAlAs/n-InGaAs or n-InP). Gains of 12.5 dB at 26 GHz were measured for 1.3 µm gate length MODFETs, which extrap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d68595bb9cec07ab21d172fd6869c185
https://doi.org/10.1109/iedm.1987.191500
https://doi.org/10.1109/iedm.1987.191500
Publikováno v:
IEEE Transactions on Electron Devices. 35:2452-2453
It was recently shown that connecting two resonant tunneling diodes (RTDs) in parallel so that the bias across them was offset resulted in a current-voltage (I-V) characteristic with two separate negative differential resistance (NDR) regions. More r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f2f5ff4a4157ff4a72316d032362fda
https://doi.org/10.1109/16.8887
https://doi.org/10.1109/16.8887