Introduction to semiconductor processing: Fabrication and characterization of p-n junction silicon solar cells

Autor: T. Beetz, E. Helgren, Ryan P. Smith, Angela An-Chi Hwang

Publikováno v: American Journal of Physics. 86:740-746

We describe an upper-division undergraduate physics laboratory experiment that integrates the fabrication and characterization of a p-n junction in silicon. Under standard illumination, this p-n junction exhibits the photovoltaic effect as well as th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4f09a7b63724ac579661414ebd2cc905
https://doi.org/10.1119/1.5046424

Bringing Anatomy Back

Autor: Jillian Giblin, Matthew Nankin, Tania Grgurich, Maureen E. Helgren

Publikováno v: The FASEB Journal. 34:1-1

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::268bfb412c20f81dc0a7a20db1682dbe
https://doi.org/10.1096/fasebj.2020.34.s1.07218

Changes in substance P and calcitonin gene-related peptide binding in the dorsal horn of rat spinal cord following pronase-induced deafferentation

Autor: Kerry Arsenault, Maureen E. Helgren, Shanta E. Kapadia, Melissa Wolfe, Carole C. Lamotte

Publikováno v: Somatosensory & Motor Research. 16:31-38

Quantitative receptor autoradiography was used to evaluate potential alterations in substance P (SP) and calcitonin gene-related peptide (CGRP) binding in the L4 spinal segment of rats following unilateral poisoning of the sciatic nerve with pronase.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0295bb07971f4522df5b7795e56e182b
https://doi.org/10.1080/08990229970627

Magnetoelectronic properties of Gd-implanted tetrahedral amorphous carbon

Autor: E. Helgren, Joel W. Ager, H. Zutz, Carsten Ronning, Li Zeng, Frances Hellman

Publikováno v: Physical Review B. 84

The structural, electronic, magnetic, and magnetoelectronic properties of tetrahedral amorphous carbon ($ta$-C) thin films doped with gadolinium via ion implantation ($ta$-C${}_{1\ensuremath{-}x}:$Gd${}_{x}$, $x$ = 0.02 \ensuremath{\sim} 0.20) have b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cf01c80c16441faeb2424e8387e3c539
https://doi.org/10.1103/physrevb.84.134419

Resonant impurity scattering and electron-phonon scattering in the electrical resistivity of Cr thin films

Autor: David W. Cooke, Frances Hellman, E. Helgren, Zoe Boekelheide

Publikováno v: Boekelheide, Z; Cooke, DW; Helgren, E; & Hellman, F. (2009). Resonant impurity scattering and electron-phonon scattering in the electrical resistivity of Cr thin films. Physical Review B-Condensed Matter and Materials Physics, 80(13). doi: 10.1103/PhysRevB.80.134426. UC Berkeley: Retrieved from: http://www.escholarship.org/uc/item/5xz6x2z8
Physical Review B, vol 80, iss 13
Physical Review B-Condensed Matter and Materials Physics, vol 80, iss 13

The resistivity as a function of temperature from 0.6 to 300 K for epitaxial and polycrystalline Cr thin films is presented and fit to a model which includes electron-phonon scattering and resonant impurity scattering. Resonant impurity scattering fr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::712be3cfa6ae5415a7b34711a939e9ca
http://www.escholarship.org/uc/item/5xz6x2z8