Zobrazeno 1 - 7
of 7
pro vyhledávání: '"E. Hal Bogardus"'
Autor:
R.A. Allen, M.W. Cresswell, C.E. Murabito, W.F. Guthrie, L.W. Linholm, C.H. Ellenwood, E. Hal Bogardus
Publikováno v:
Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002..
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a696e40a10d30846029d20511a024d1e
https://doi.org/10.1109/icmts.2002.1193163
https://doi.org/10.1109/icmts.2002.1193163
Autor:
Philip R. Bingham, Jeffery R. Price, Kenneth W. Tobin, Marylyn Hoy Bennett, E. Hal Bogardus, Thomas P. Karnowski, Michael Bishop
Publikováno v:
Process and Materials Characterization and Diagnostics in IC Manufacturing.
In semiconductor device manufacturing, critical dimension (CD) metrology provides a measurement for precise line-width control during the lithographic process. Currently scanning electron microscope (SEM) tools are typically used for this measurement
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfbbdb46b42dec06ccd986883587c0e9
https://doi.org/10.1117/12.485229
https://doi.org/10.1117/12.485229
Autor:
Michael W. Cresswell, Richard A. Allen, Ronald G. Dixson, Christine E. Murabito, E. Hal Bogardus
Publikováno v:
AIP Conference Proceedings.
NIST and International SEMATECH are developing single‐crystal reference materials for use in evaluating and calibrating critical dimension (CD) metrology tools. Primary calibration of these reference materials uses a high‐resolution transmission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a52b7388e6c80f267733b75f10fcfd04
https://doi.org/10.1063/1.1622505
https://doi.org/10.1063/1.1622505
Autor:
Michael W. Cresswell, Loren W. Linholm, Richard A. Allen, Barbara A. am Ende, Marylyn Hoy Bennett, William F. Guthrie, J. V. Martinez de Pinillos, E. Hal Bogardus, Christine E. Murabito
Publikováno v:
SPIE Proceedings.
Prototype linewidth reference materials with Critical Dimensions (CDs) as narrow as 70 nm have been patterned in silicon-on-insulator films. The sidewalls of the reference features are parallel, normal to the substrate surface, and have almost atomic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6096d383cd83850e1ac111d7c4939a62
https://doi.org/10.1117/12.473450
https://doi.org/10.1117/12.473450
Autor:
Herschel M. Marchman, Joseph Edward Griffith, George W. Banke, Bhanwar Singh, Lee Edward Trimble, E. Hal Bogardus, Arnold W. Yanof, Lumdas H. Saraf, Michael T. Postek, John A. Allgair, Neal T. Sullivan, Jerry E. Schlesinger, Charles N. Archie, András E. Vladár
Publikováno v:
SPIE Proceedings.
The stringent critical dimension control requirements in cutting edge device facilities have placed significant demands on metrologists and upon the tools they use. We are developing a unified, advanced critical dimension scanning electron microscope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b4c28b986cf18af8b7f992717a3bd53
https://doi.org/10.1117/12.308724
https://doi.org/10.1117/12.308724
Autor:
Rustum Roy, E. Hal Bogardus
Publikováno v:
Journal of the American Ceramic Society. 46:573-576
Differences in thermal expansion between glass and crystal and between halide and oxide produce hydrostatic and nonhydrostatic pressures (negative or positive) in polyphase bodies which result in marked changes in the phase-transition temperature of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4ef8ed667ba0a85493cad4a9eb868ad
https://doi.org/10.1111/j.1151-2916.1963.tb14618.x
https://doi.org/10.1111/j.1151-2916.1963.tb14618.x
Autor:
E. Hal Bogardus, H.Barry Bebb
Publikováno v:
Physical Review. 176:993-1002
The broad-band photoluminescence spectra typical of bulk-grown or low-purity epitaxial GaAs breaks into a number of sharp emission lines in very-high-purity GaAs. At low temperatures (\ensuremath{\sim}2\ifmmode^\circ\else\textdegree\fi{}K), emission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed44cedbebc9fdc3d4a2d2b276c50587
https://doi.org/10.1103/physrev.176.993
https://doi.org/10.1103/physrev.176.993