Zobrazeno 1 - 5
of 5
pro vyhledávání: '"E. H. C. Ullersma"'
Publikováno v:
Physical Review B. 61:10133-10141
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63fbcb1521f5a467a3ac8431d5fbcbb8
https://doi.org/10.1103/physrevb.61.10133
https://doi.org/10.1103/physrevb.61.10133
Publikováno v:
Applied Physics Letters. 73:3244-3246
Thin-film transistors incorporating a hot-wire chemical-vapor-deposited silicon layer have been shown to exhibit superior electronic stability as compared to glow-discharge-deposited amorphous silicon devices. Hot-wire-deposited silicon films of vari
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c23cadd6eeb8bd40055a0480287398dc
https://doi.org/10.1063/1.122732
https://doi.org/10.1063/1.122732
Publikováno v:
2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No.01TH8547).
In low temperature processed amorphous silicon and its alloys like silicon nitride and carbide the presence and the behavior of hydrogen is of utmost importance for the applicability of these materials. Besides to beneficially passivate Si-dangling b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94613adc35d473081f4dcaacbc31c001
https://doi.org/10.1109/smicnd.2001.967504
https://doi.org/10.1109/smicnd.2001.967504
Publikováno v:
Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices ISBN: 9780792350088
In the last decennium it has become clear how hydrogen and hydrogenated gases are involved in the formation of thin dielectric nitride and oxynitride films As a consequence hydrogen is incorporated in the deposited or grown films, where it plays a ro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a4aa24f1f69e89b11a389ef967ef951
https://doi.org/10.1007/978-94-011-5008-8_31
https://doi.org/10.1007/978-94-011-5008-8_31
Autor:
A. van Veen, E. H. C. Ullersma, W.G.J.H.M. van Sark, K.T. Westerduin, D. K. Inia, F. H. P. M. Habraken, W. F. van der Weg
Publikováno v:
Scopus-Elsevier
We used Fourier Transform Infra-Red (FTIR) analysis of bi-layers of plasma-grown hy-drogenated amorphous silicon-carbide films to investigate the role of the material structure in the hydrogen diffusion process. In the bi-layers one layer was deposit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::abaca96ba0e35d1bbfb35d649876cf5c
https://doi.org/10.1557/proc-467-141
https://doi.org/10.1557/proc-467-141