Zobrazeno 1 - 10
of 26
pro vyhledávání: '"E. H. A. Granneman"'
Publikováno v:
Journal of Applied Physics. 79:1505-1510
We describe a study of the generation of slow interface states (time constants ≳40 s) by vacuum ultraviolet irradiation (Kr lamp, hν=10 eV) on metal–oxide–silicon samples with approximately 30 nm of thermally grown SiO2 and a transparent alumi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::865c1f1852dc99a75447f3b0ccf206cb
https://doi.org/10.1063/1.360992
https://doi.org/10.1063/1.360992
Publikováno v:
Journal of Applied Physics. 78:306-316
This article is concerned with the instability and recovery of the large negative midgap voltage induced in metal‐thermally grown SiO2‐silicon capacitors with transparent Al gate upon vacuum ultraviolet exposure by a Kr lamp (hν=10 eV). Evidence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc0054292500d6dc3f271ce0219d964d
https://doi.org/10.1063/1.360676
https://doi.org/10.1063/1.360676
Autor:
J. M. M. de Nijs, K. G. Druijf, E. V. D. Drift, E. H. A. Granneman, Valeri Afanas'ev, P. Balk
Publikováno v:
Journal of Non-Crystalline Solids. 187:206-210
Donor-type interface states, generated by vacuum ultraviolet irradiation have been studied. They anneal at room temperature but only when in a neutral state. This anneal is accompanied by the release of atomic hydrogen. It is proposed that the states
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2ac5ecd14b08535121e510f7d86915e
https://doi.org/10.1016/0022-3093(95)00139-5
https://doi.org/10.1016/0022-3093(95)00139-5
Autor:
E. H. A. Granneman
Publikováno v:
Microelectronic Engineering. 22:11-19
It is shown that wafer processing systems in which wafer pre-clean, dry oxidation and polySi deposition processes are integrated in one vacuum system are very useful to grow thin oxide films with (sub-)monolayer control. Most attention is paid to bat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e984c9c536797b2af27c4d63a05b734
https://doi.org/10.1016/0167-9317(93)90122-l
https://doi.org/10.1016/0167-9317(93)90122-l
Publikováno v:
Microelectronic Engineering. 22:231-234
A technique was developed to measure the energy distribution of the density of slow states. From the results we conclude that slow states, related to defects in the SiO2, exchange their charge directly with the silicon valence band states or indirect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::771c235521f910f2af435e10669cbbca
https://doi.org/10.1016/0167-9317(93)90164-z
https://doi.org/10.1016/0167-9317(93)90164-z
Publikováno v:
Applied Physics Letters. 67:3162-3164
A study of the generation of H‐induced defects in the Al–SiO2–Si system by vacuum ultraviolet radiation (hν=10 eV) shows that small cross‐section hole traps in the bulk of the oxide and donor‐type states at the Si–SiO2 interface are form
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0a6ce3dbf264b8315f6d148825c05c8
https://doi.org/10.1063/1.115149
https://doi.org/10.1063/1.115149
Publikováno v:
Applied Physics Letters. 65:347-349
We have used high‐frequency and quasi‐static capacitance‐voltage measurements to study the properties of interface states generated upon vacuum‐ultraviolet irradiation under positive gate bias followed by neutralization of the holes trapped i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a61931a8ad04d0f0973857d3797207bd
https://doi.org/10.1063/1.112971
https://doi.org/10.1063/1.112971
Autor:
E. H. A. Granneman
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:2741
A number of system concepts in which the integrity of substrate surface and film interfaces are preserved are discussed. This includes stand‐alone tools with internal clean air or nitrogen facilities with wafer transfer between such tools in clean
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37f091742ad5d1d1a6a4ea098875512c
https://doi.org/10.1116/1.587240
https://doi.org/10.1116/1.587240
Autor:
E. H. A. Granneman, M. M. B. Wijnakker
Publikováno v:
Zeitschrift für Naturforschung A. 35:883-893
bstract A In weakly ionized argon and xenon rotating plasmas the rotational velocity and the temperature and pressure distribution have been measured. The stationary discharge is generated by two opposed cathode-anode configurations. The arc current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2700351be49266fa008c1ffc1ba70eda
https://doi.org/10.1515/zna-1980-0815
https://doi.org/10.1515/zna-1980-0815
Publikováno v:
Journal of Physics B: Atomic and Molecular Physics. 9:L87-L91
An experiment is reported on two-step photoionization of Cs via the 6P3/2 intermediate state using circularly polarized radiation from a GaAs laser for the first step (8521 AA) and from an Ar-ion laser for the second step. Values for the ratio of ion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b04dbf0e08a88d4519aa6f40d6baa5a
https://doi.org/10.1088/0022-3700/9/5/005
https://doi.org/10.1088/0022-3700/9/5/005