Zobrazeno 1 - 10
of 39
pro vyhledávání: '"E. Grunbaum"'
Publikováno v:
Journal of Superconductivity and Novel Magnetism. 21:145-150
The crystallographic surface structure of thermal vapor grown CsXWO3 0.005≤x≤0.3 crystals was investigated locally by electron backscattered diffraction in the environmental scanning electron microscope. Monoclinic to hexagonal phase transformati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2c928beeb3ee6b9cb4021728c9e09c1
https://doi.org/10.1007/s10948-008-0309-0
https://doi.org/10.1007/s10948-008-0309-0
Publikováno v:
Journal of Applied Physics. 93:3057-3062
Epitaxial quality of Ge layers on GaAs(001), as well as the quality of the Si capping layers, were investigated in situ by reflection high-energy electron diffraction during growth and, subsequently, by scanning electron and scanning probe microscopi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::180caebe0fdc4b849ea55cf684f6aeb9
https://doi.org/10.1063/1.1542656
https://doi.org/10.1063/1.1542656
Publikováno v:
Advanced Materials. 11:1437-1441
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5aca5e924996d0912b4e3db4e3cff027
https://doi.org/10.1002/(sici)1521-4095(199912)11:17<1437::aid-adma1437>3.0.co
https://doi.org/10.1002/(sici)1521-4095(199912)11:17<1437::aid-adma1437>3.0.co
Autor:
J.S. Roberts, R. Grey, Paul Griffin, J. Barnes, A. G. Norman, Keith W. J. Barnham, John L. Hutchison, Massimo Mazzer, D.B. Holt, E. Grunbaum, John P. R. David
Publikováno v:
Materials Science and Engineering: B. 42:43-51
The location, density and nature of misfit dislocations (MDs) in lattice-strained multi-quantum well (MQW) structures were investigated by depth-resolved electron-beam-induced current (EBIC) and cathodoluminescence (CL) modes in a scanning electron m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97c644de92c50d538bce969ef1e8f2b2
https://doi.org/10.1016/s0921-5107(96)01681-9
https://doi.org/10.1016/s0921-5107(96)01681-9
Autor:
C. Zanotti-Fregonara, R. Grey, J. Barnes, Massimo Mazzer, K. W. J. Barnham, John P. R. David, Carsten Rohr, Paul Griffin, G. Haarpaintner, J.S. Roberts, E. Grunbaum, C. Olson, M. A. Pate
Publikováno v:
Journal of Applied Physics. 80:5815-5820
The effect of the dislocation line density produced by the relaxation of strain in GaAs/InxGa1−xAs multiquantum wells where x=0.155–0.23 has been studied. There is a strong correlation between the dark line density, observed by cathodoluminescenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dcfe56d9b48a94e8c739bd30195c693
https://doi.org/10.1063/1.363574
https://doi.org/10.1063/1.363574
Autor:
D B Holt, Jenny Nelson, C. T. Foxon, E. Grunbaum, Z Barkay, J.S. Roberts, Keith W. J. Barnham, E Napchan
Publikováno v:
Semiconductor Science and Technology. 10:627-633
A new method of determining the minority carrier diffusion length in multilayer solar cells is described. Electron beam-induced current (EBIC) gain measurements, performed in a scanning electron microscope in the planar sample configuration, are comp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d15059e34715d8612ed2c82d0d3a1daf
https://doi.org/10.1088/0268-1242/10/5/010
https://doi.org/10.1088/0268-1242/10/5/010
Publikováno v:
EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany ISBN: 9783540851547
The secondary electron (SE) emission flux in a high-resolution scanning electron microscope (HRSEM) is a powerful tool for delineation of electrically active dopant concentration, built-in potentials and surface electric fields in semiconductor junct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70b288f22e2521b0122ba4ff9adc385b
https://doi.org/10.1007/978-3-540-85156-1_320
https://doi.org/10.1007/978-3-540-85156-1_320
Autor:
Jacek Marczewski, E. Grunbaum, Piotr Grabiec, M. Molotskii, B. Jaroszewicz, Yossi Rosenwaks, Zahava Barkay, I. Volotsenko, G. Meshulam
Publikováno v:
Journal of Applied Physics. 107:014510
The secondary electron emission flux in a scanning electron microscope is a powerful tool for delineation of electrically active dopant concentration, built-in potentials, and surface electric fields in semiconductor junctions. In all the secondary e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f29d89817217a9e19a5931308f69a838
https://doi.org/10.1063/1.3276090
https://doi.org/10.1063/1.3276090
Publikováno v:
Nature. 395:336-337
Nanoparticles of layered compounds form hollow cage structures of various types, including nanotubes1. Here we study nanoparticles of the layered compound NiCl2, which can form cage structures, with different numbers of atomic layers, and nanotubes.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2bba00ff93c8e28c91c1e85e0c0d0ef
https://doi.org/10.1038/26380
https://doi.org/10.1038/26380
Autor:
Massimo Mazzer, A. Schwarzman, E. Strassburg, Th. Glatzel, Amir Boag, E. Lepkifker, K. W. J. Barnham, Zahava Barkay, Yossi Rosenwaks, E. Grunbaum
Publikováno v:
Journal of Applied Physics. 98:084310
Ultrahigh vacuum cross-sectional Kelvin probe force microscopy has been used to characterize In0.17GaAs∕GaAsP0.06 multiquantum well structures, together with secondary electron microscopy. Individual 8nm quantum wells were well resolved in both met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c8b996900e7514b82896d142ab69e73
https://doi.org/10.1063/1.2106011
https://doi.org/10.1063/1.2106011