Zobrazeno 1 - 10
of 53
pro vyhledávání: '"E. Gourvest"'
Autor:
P.-Y. Friot, F. Salvatore, S. Valette, R. Yim, E. Gourvest, Jacob George C, C. Perrot, B. Qian, Nan-Rong Chiou, V. Balan
Publikováno v:
Microelectronic Engineering. 195:36-40
CMP is a complex process that combines the synergistic effect of a chemical action performed by the slurry and a mechanical one done by the pad and the abrasive particles of the slurry. The pad plays a key role in the CMP process as it contributes to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dda196c4e0c8453ed6d075f025c14af0
https://doi.org/10.1016/j.mee.2017.12.002
https://doi.org/10.1016/j.mee.2017.12.002
Publikováno v:
2018 IEEE 20th Electronics Packaging Technology Conference (EPTC).
Semiconductor devices become more complicated and the need for the use of semiconductor chips in portable products increases, the need for thinner chips and packages becomes greater. It brings great challenges of processing, handling, and understandi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1590ff66ee8f800584d68e2f3f7723c5
https://doi.org/10.1109/eptc.2018.8654413
https://doi.org/10.1109/eptc.2018.8654413
Autor:
Sandrine Lhostis, Raluca Tiron, P. Michallon, Sylvain Maitrejean, Romuald Blanc, Christophe Vallée, E. Gourvest, Dominique Jourde
Publikováno v:
ECS Journal of Solid State Science and Technology. 1:Q119-Q122
Phase-change memory is one of the most promising technologies for the future non-volatile memories generation and the synthesis of highly conformal active material is one of the main challenges. Herein, we report the successful chemical vapor deposit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2028417991f3917cd048cfc59d5d4543
https://doi.org/10.1149/2.017206jss
https://doi.org/10.1149/2.017206jss
Autor:
Bernard Pelissier, A. Roule, Sandrine Lhostis, E. Gourvest, Christophe Vallée, Sylvain Maitrejean
Publikováno v:
Journal of The Electrochemical Society. 159:H373-H377
andGeTeoxidationontheirphase-changepropertieswerestudiedbyopticalmeasurementsandParallelAngleResolved X-ray Photoelectron Spectroscopy (PARXPS). The influence of oxygen on the active material was depicted in order toexplain variations of the phase-c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a9aa8ec94bdbb774c80a2ffad9e4e92
https://doi.org/10.1149/2.027204jes
https://doi.org/10.1149/2.027204jes
Autor:
H. Abed, Corentin Jorel, Corentin Vallée, M. Bonvalot, Catherine Dubourdieu, E. Gourvest, M. Kahn
Publikováno v:
Thin Solid Films
Thin Solid Films, Elsevier, 2010, pp.518, 5057-5060
Thin Solid Films, 2010, pp.518, 5057-5060
Thin Solid Films, Elsevier, 2010, pp.518, 5057-5060
Thin Solid Films, 2010, pp.518, 5057-5060
The microstructure of thin HfO2–Al2O3 nanolaminate high κ dielectric stacks grown by atomic vapor deposition has been studied by attenuated total reflection spectroscopy (ATR) and 8 eV spectroscopic ellipsometry (SE). The presence of Al2O3 below H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::36c2c9f0ee5d1807229c40edd548c772
https://doi.org/10.1016/j.tsf.2010.02.034
https://doi.org/10.1016/j.tsf.2010.02.034
Autor:
A. Roman, A. Seignard, Perrine Batude, C. Ribiere, O. Pollet, V. Benevent, E. Gourvest, M.-P. Samson, N. Rambal, Lucile Arnaud, L. Brunet, Hervé Denis, Y. Loquet, M. Vinet, V. Lapras, L. Emery, V. Lu, S. Maitrejean, Vincent Jousseaume, P. Besson, C.Fenouillet Beranger, G. Druais, C.Euvrard Colnat, Bernard Previtali, F. Deprat, R. Kachtouli, S. Kerdiles, Y.Le Friec, F. Aussenac
Publikováno v:
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::479981eb26c9e73eb3604e339f643d59
https://doi.org/10.7567/ssdm.2015.k-4-3
https://doi.org/10.7567/ssdm.2015.k-4-3
Autor:
S. Joblot, C. De-Buttet, Sébastien Petitdidier, F. Abbate, C. Jenny, Didier Celi, B. Ramadout, Thomas Quemerais, Sebastien Haendler, Laurent Favennec, Daniel Gloria, O. Robin, C. Richard, E. Canderle, B. Borot, K. Haxaire, N. Derrier, Remi Beneyton, Julien Rosa, G. Ribes, O. Saxod, P. Brun, Y. Campidelli, Pascal Chevalier, Cedric Durand, A. Montagne, Francois Leverd, G. Imbert, Olivier Gourhant, M. Guillermet, E. Gourvest, L. Berthier, Clement Tavernier, J. Cossalter, M. Buczko, C. Deglise, Mickael Gros-Jean, C. Julien, Jean-Damien Chapon, K. Courouble, D. Ney, G. Avenier, Patrick Maury, Y. Carminati, R. Bianchini, F. Foussadier
Publikováno v:
2014 IEEE International Electron Devices Meeting.
This paper presents the first 55 nm SiGe BiCMOS technology developed on a 300 mm wafer line in STMicroelectronics. The technology features Low Power (LP) and General Purpose (GP) CMOS devices and 0.45 µm2 6T-SRAM bit cell. High Speed (HS) HBT exhibi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a267063e241381b03eefae310424668
https://doi.org/10.1109/iedm.2014.7046978
https://doi.org/10.1109/iedm.2014.7046978
Autor:
Alexis Farcy, Philippe Delpech, Francois Leverd, Lucile Broussous, Sebastien Cremer, Remi Beneyton, Nathalie Vulliet, Ali Ayazi, Lieven Verslegers, D. Pelissier-Tanon, N-K Hon, T. Quemerais, L. Salager, Cedric Durand, Subal Sahni, E. Gourvest, P. De Dobbelaere, Olivier Gourhant, J.F. Carpentier, K. Haxaire, Yannick Sanchez, M. Fourel, P. Brun, C. Richard, Attila Mekis, Frederic Boeuf, M. Guillermet, D. Benoit, L. Pinzelli, Peng Sun, Y. Le-Friec, B. Sautreuil, Y. Chi, F. Battegay, B. Orlando, F. Baron, Daniel Gloria, E. Batail, Thierry Pinguet, D. Monnier, H. Petiton, D. Ristoiu, Jean-Robert Manouvrier, Gianlorenzo Masini, Sébastien Jan
Publikováno v:
2013 IEEE International Electron Devices Meeting.
Recently Silicon Photonics has generated an outstanding interest for integrated optical communications. In this paper we describe a 300mm Silicon Photonics platform designed for 25Gb/s and above applications at the three typical communication wavelen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a960f0db21112f5d1e743e8e26cef219
https://doi.org/10.1109/iedm.2013.6724623
https://doi.org/10.1109/iedm.2013.6724623
Autor:
Nicolas Planes, J. Pradelle, Pierre Perreau, P. Brun, Olivier Weber, Konstantin Bourdelle, Thierry Poiroux, Bich-Yen Nguyen, J. Ducote, Claire Fenouillet-Beranger, Remi Beneyton, R. Bianchini, B. Orlando, Francois Andrieu, A. Margain, L. Tosti, F. Abbate, C. Borowiak, C. Richard, D. Pellissier-Tanon, O. Faynot, C. Richier, T. Benoist, Magali Gregoire, Pascal Gouraud, Frederic Boeuf, Thomas Skotnicki, J. Bustos, Sebastien Haendler, E. Gourvest
Publikováno v:
Solid-State Electronics
Solid-State Electronics, Elsevier, 2013, 88, pp.15-20,. ⟨10.1016/j.sse.2013.04.008⟩
Solid-State Electronics, 2013, 88, pp.15-20,. ⟨10.1016/j.sse.2013.04.008⟩
Solid-State Electronics, Elsevier, 2013, 88, pp.15-20,. ⟨10.1016/j.sse.2013.04.008⟩
Solid-State Electronics, 2013, 88, pp.15-20,. ⟨10.1016/j.sse.2013.04.008⟩
In this paper, we study how to boost the performance of FDSOI (Fully-Depleted Silicon On Insulator) devices with High-K and Single Metal gate by using the combination of Ultra-Thin Buried Oxide (UTBOX), Ground Plane (GP) and local back biasing integr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4d8055efd4e4d214521e76c15c3c374
https://hal.archives-ouvertes.fr/hal-01002051
https://hal.archives-ouvertes.fr/hal-01002051
Autor:
R. Morel, L. Dussault, M. Armand, Françoise Hippert, J. F. Nodin, C. Jahan, Andrea Fantini, M. Audier, Pierre Noé, B. De Salvo, A. Brenac, C. Valle, O. Cueto, A. Persico, Gabriele Navarro, A. Roule, Jean-Yves Raty, F. Fillot, Sandrine Lhostis, L. Perniola, Sylvain Maitrejean, E. Gourvest, G. Betti Beneventi, Giada Ghezzi, Ph. Michallon, Veronique Sousa, N. Pashkov
Publikováno v:
2012 IEEE International Interconnect Technology Conference.
Among all the new memories concepts, Phase Change Memories (PCM) is one of the most promising. However, various challenges remain. This paper reviews the materials and processes required to face these challenges. As an example, attention will be made
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f231f4ad10248b7a409d215101584c74
https://doi.org/10.1109/iitc.2012.6251591
https://doi.org/10.1109/iitc.2012.6251591