Zobrazeno 1 - 10
of 281
pro vyhledávání: '"E. Gonsalves"'
Publikováno v:
Ingeniería Mecánica, Vol 4, Iss 3, Pp 7-10 (2001)
Se determina la capacidad de carga de las anclas de solicitación vertical, empleadas en la fijación de las plataformasperforadoras de petróleo de aguas profundas. Para ello, se desarrollan varios modelos del proceso de retención del ancla enel fa
Externí odkaz:
https://doaj.org/article/5e733ade77f54ecfaa3fa65a51a740b2
Autor:
Santu Nandi, Lalit Khillare, Sunil Kumar, Mohamad G. Moinuddin, Manvendra Chauhan, Sumit Choudhary, Satinder K. Sharma, Subrata Ghosh, Kenneth E. Gonsalves
Publikováno v:
ACS Applied Nano Materials. 6:4132-4140
Autor:
Santu Nandi, Lalit Khillare, Mohamad G. Moinuddin, Sunil Kumar, Manvendra Chauhan, Satinder K. Sharma, Subrata Ghosh, Kenneth E. Gonsalves
Publikováno v:
ACS Applied Nano Materials. 5:10268-10279
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 21
Autor:
Mohamad G. Moinuddin, Manvendra Chauhan, Midathala Yogesh, Satinder K. Sharma, Subrata Ghosh, Kenneth E. Gonsalves
Publikováno v:
ACS Applied Electronic Materials. 3:1996-2004
Given the current need for resist materials for patterning transistors with ultralow nodes, there has been a quest for developing resists with improved performance for nanoscale patterning with goo...
Autor:
Kenneth E. Gonsalves, Subrata Ghosh, Manvendra Chauhan, Satinder K. Sharma, Nagarjuna Ravi Kiran
Publikováno v:
ACS Applied Electronic Materials. 2:3805-3817
Since the fabrication of micro-/nanoelectronic devices are marching toward ultralow node technology with dense patterns to meet the current industry demands, continuous advancement is needed in ter...
Autor:
Shivani Sharma, Manoj Sahani, Mohamad G. Moinuddin, Kenneth E. Gonsalves, Midathala Yogesh, Rudra Kumar, Satinder K. Sharma
Publikováno v:
ACS Applied Nano Materials. 3:8651-8661
Extending the resolution limit of next-generation lithography down to 15 nm or below requires the resist attaining small features, high irradiation sensitivity, and low line edge/width roughness. T...
Autor:
Kenneth E. Gonsalves, Mohamad G. Moinuddin, Manvendra Chauhan, Satinder K. Sharma, Rudra Kumar
Publikováno v:
ACS Applied Materials & Interfaces. 12:19616-19624
Hybrid metal-organic cluster resist materials, also termed as organo-inorganics, demonstrate their potential for use in next-generation lithography owing to their ability for patterning down to ∼10 nm or below. High-resolution resist patterning is
Publikováno v:
ACS Applied Polymer Materials. 2:1790-1799
Given the need for a next-generation technology node in the area of integrated circuits (ICs), improvement in the properties of resist materials, particularly sensitivity (ED), resolution, good etc...
Autor:
Juan E. Andrade, Hyeongyun Cha, Nenad Miljkovic, Jacob B. Hoffman, Julian H. Reed, Marianne Alleyne, Junho Oh, Sungmin Hong, Marco Toc, Kyoo D. Jo, Donald M. Cropek, Catherine E. Dana, Jessica K. Román, Andrew E. Gonsalves
Publikováno v:
ACS applied bio materials. 2(7)
Biofouling disrupts the surface functionality and integrity of engineered substrates. A variety of natural materials such as plant leaves and insect wings have evolved sophisticated physical mechanisms capable of preventing biofouling. Over the past