Zobrazeno 1 - 10
of 359
pro vyhledávání: '"E. Gombia"'
Autor:
D. Kindl, Pavel Hubík, František Dubecký, Matúš Dubecký, Bohumír Zaťko, E. Gombia, V. Kolesár
Publikováno v:
Applied surface science 467-468 (2019): 1219–1225. doi:10.1016/j.apsusc.2018.10.164
info:cnr-pdr/source/autori:Dubecky F.; Zatko B.; Kolesar V.; Kindl D.; Hubik P.; Gombia E.; Dubecky M./titolo:Charge collection efficiency of Pt vs. Mg contacts on semi-insulating GaAs/doi:10.1016%2Fj.apsusc.2018.10.164/rivista:Applied surface science/anno:2019/pagina_da:1219/pagina_a:1225/intervallo_pagine:1219–1225/volume:467-468
info:cnr-pdr/source/autori:Dubecky F.; Zatko B.; Kolesar V.; Kindl D.; Hubik P.; Gombia E.; Dubecky M./titolo:Charge collection efficiency of Pt vs. Mg contacts on semi-insulating GaAs/doi:10.1016%2Fj.apsusc.2018.10.164/rivista:Applied surface science/anno:2019/pagina_da:1219/pagina_a:1225/intervallo_pagine:1219–1225/volume:467-468
A comparative study of diode structures based on semi-insulating (SI) GaAs with evaporated Mg vs. Pt contacts is presented. Electric field strength in the vicinity of the contacts is inferred from the detection of α-particles emitted from 241Am radi
Autor:
Roberto Fornari, Claudio Ferrari, Maura Pavesi, Andrea Baraldi, Antonella Parisini, Ildikó Cora, E. Gombia, Detlef Klimm, Francesco Boschi, Matteo Bosi, Béla Pécz, Francesco Mezzadri, V. Montedoro
Publikováno v:
Acta Materialia. 140:411-416
The thermal stability of e-Ga 2 O 3 polymorph was studied by complementary methods. Epitaxial films of e-Ga 2 O 3 grown on c-oriented sapphire were annealed at temperatures in the range 700–1000 °C and then investigated by X-ray diffraction (XRD)
Autor:
F. Bissoli, F. Pattini, Giulia Spaggiari, S. Rampino, Aldo Kingma, M. Calicchio, Danilo Bersani, E. Gombia, Massimo Mazzer, M. Bronzoni, Filippo Annoni, Edmondo Gilioli
Publikováno v:
Solar energy materials and solar cells 166 (2017): 247–253. doi:10.1016/j.solmat.2016.10.048
info:cnr-pdr/source/autori:Mazzer M.; Rampino S.; Spaggiari G.; Annoni F.; Bersani D.; Bissoli F.; Bronzoni M.; Calicchio M.; Gombia E.; Kingma A.; Pattini F.; Gilioli E./titolo:Bifacial CIGS solar cells grown by Low Temperature Pulsed Electron Deposition/doi:10.1016%2Fj.solmat.2016.10.048/rivista:Solar energy materials and solar cells/anno:2017/pagina_da:247/pagina_a:253/intervallo_pagine:247–253/volume:166
info:cnr-pdr/source/autori:Mazzer M.; Rampino S.; Spaggiari G.; Annoni F.; Bersani D.; Bissoli F.; Bronzoni M.; Calicchio M.; Gombia E.; Kingma A.; Pattini F.; Gilioli E./titolo:Bifacial CIGS solar cells grown by Low Temperature Pulsed Electron Deposition/doi:10.1016%2Fj.solmat.2016.10.048/rivista:Solar energy materials and solar cells/anno:2017/pagina_da:247/pagina_a:253/intervallo_pagine:247–253/volume:166
In this paper we report on the single stage deposition of CuInxGa1−xSe2 (CIGS)-based bifacial solar cells on glass coated with Fluorine-doped Tin Oxide (FTO) or Indium Tin Oxide (ITO) by single-stage low-temperature (250 °C) pulsed electron deposi
Autor:
M. Mičušík, Pavol Boháček, František Dubecký, J. Mudroň, D. Kindl, Vladimír Nečas, E. Gombia, Gabriel Vanko, Pavel Hubík, Matúš Dubecký
Publikováno v:
Applied surface science 395 (2017): 131–135. doi:10.1016/j.apsusc.2016.04.176
info:cnr-pdr/source/autori:Dubecky F.; Kindl D.; Hubik P.; Micusik M.; Dubecky M.; Bohacek P.; Vanko G.; Gombia E.; Necas V.; Mudron J./titolo:A comparative study of Mg and Pt contacts on semi-insulating GaAs: Electrical and XPS characterization/doi:10.1016%2Fj.apsusc.2016.04.176/rivista:Applied surface science/anno:2017/pagina_da:131/pagina_a:135/intervallo_pagine:131–135/volume:395
info:cnr-pdr/source/autori:Dubecky F.; Kindl D.; Hubik P.; Micusik M.; Dubecky M.; Bohacek P.; Vanko G.; Gombia E.; Necas V.; Mudron J./titolo:A comparative study of Mg and Pt contacts on semi-insulating GaAs: Electrical and XPS characterization/doi:10.1016%2Fj.apsusc.2016.04.176/rivista:Applied surface science/anno:2017/pagina_da:131/pagina_a:135/intervallo_pagine:131–135/volume:395
We present a comparative study of the symmetric metal-SI GaAs-metal (M-S-M) diodes with full-area contacts on both device sides, in order to demonstrate the effect of contact metal work function in a straightforward way. We compare the conventional h
Autor:
G. Attolini, S. Beretta, M. Bosi, C. Ferrari, C. Frigeri, P. Frigeri, E. Gombia, L. Lazzarini, F. Rossi, L. Seravalli, G. Trevisi, Rovshan Hasanov, Chingiz Sultanov, Gulnaz Gahramanova, Nahida Musayeva, Teymur Orujov, Francesco Sansone, Laura Baldini, Francesco Rispoli, Zahra Sadre Momtaz, Pasqualantonio Pingue, Stefano Roddaro
Publikováno v:
Explosives Detection, edited by Lorenzo Capineri, Eyüp Kuntay Turmu?, pp. 77–98, 2019
info:cnr-pdr/source/autori:G. Attolini; S. Beretta; M. Bosi; C. Ferrari; C. Frigeri; P. Frigeri; E. Gombia; L. Lazzarini; F. Rossi; L. Seravalli; G. Trevisi; Rovshan Hasanov; Chingiz Sultanov; Gulnaz Gahramanova; Nahida Musayeva; Teymur Orujov; Francesco Sansone; Laura Baldini; Francesco Rispoli; Zahra Sadre Momtaz; Pasqualantonio Pingue; Stefano Roddaro/titolo:UnExploDe: Portable Sensors for Unmanned Explosive Detection/titolo_volume:Explosives Detection/curatori_volume:Lorenzo Capineri, Eyüp Kuntay Turmu?/editore:/anno:2019
info:cnr-pdr/source/autori:G. Attolini; S. Beretta; M. Bosi; C. Ferrari; C. Frigeri; P. Frigeri; E. Gombia; L. Lazzarini; F. Rossi; L. Seravalli; G. Trevisi; Rovshan Hasanov; Chingiz Sultanov; Gulnaz Gahramanova; Nahida Musayeva; Teymur Orujov; Francesco Sansone; Laura Baldini; Francesco Rispoli; Zahra Sadre Momtaz; Pasqualantonio Pingue; Stefano Roddaro/titolo:UnExploDe: Portable Sensors for Unmanned Explosive Detection/titolo_volume:Explosives Detection/curatori_volume:Lorenzo Capineri, Eyüp Kuntay Turmu?/editore:/anno:2019
The project's aim is to prepare portable sensors for explosives based on semiconductor nanowires or carbon nanotubes. Nanostructures permit the preparation of sensitive, very compact and lightweight chemical sensors able to detect the air presence of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::3393c9a473c1f7268d852b7cda5372b1
https://publications.cnr.it/doc/416452
https://publications.cnr.it/doc/416452
Autor:
Pasquale Antuofermo, Stefano Roddaro, Pierre Charrue, L. Seravalli, P. Frigeri, Vitalii Lytvyn, Timothy Bechtel, Luigi Carnevale, G. Trevisi, L. Lazzarini, V. Palamarchuck, M. Bosi, Levente Tábi, Luka Snoj, D. Tatyanko, Bulat Rameev, Juan P. Martínez Pastor, O. Mishchenko, Noureddine Maamar, Israel Schechter, Zahra Sadre Momtaz, Fredrik Laurell, Stefano De Muro, Andrea Revilla-Cuesta, Chingiz Sultanov, C. Ferrari, N. Musayeva, Yu. Shiyan, Konstantin Lukin, José García-Calvo, P. Sushchenko, Lieutenant Colonel Luigi Cassioli, Bellada Amel, F. Rossi, Ivan Steker, Ihor Pavlov, Cristiano Stifini, Venceslav Kafedziski, Dusan Gleich, Stoiljkovic Milovan, Volodymyr I. Chegel, Gennadiy Pochanin, Valentin Kolobrodov, Teymur Orujov, Yuriy Serozhkin, Francesco Colao, Motoyuki Sato, Zdenka Babic, Emir Skejic, Laura Baldini, José Coutinho, Sergii K. Lukin, Francesco Rispoli, O. Zemlyanіy, İlhami Ünal, Mario Mustra, Graham A. Turnbull, Ivana Capan, Mohamed Lazoul, Mehmet Burcin Unlu, Takeshi Ohshima, Andrii M. Lopatynskyi, Francesco Sansone, Vladimir Radulović, Lorenzo Capineri, Sergey A. Piletsky, G. V. Mozzhukhin, E. Gombia, S. I. Tarapov, Pedro Rodríguez, Željko Pastuović, Tomislav Brodar, Rafael Abargues, Pavlo Vyplavin, G. Attolini, Gulnaz Gahramanova, L. Yurchenko, Bart Boonaker, Tomás Torroba, C. Frigeri, S. Beretta, Jean-Louis Coutaz, Frank Schnürer, Antonio Palucci, Rovshan Hasanov, Pasqualantonio Pingue
Publikováno v:
NATO Science for Peace and Security Series B: Physics and Biophysics ISBN: 9789402417289
The main goal of this project is to demonstrate the advantages of sensor integration on a remotely controlled robotic platform for increasing operator safety and improving the classification of explosive targets. This is accomplished by combining the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ba96aef02dcb62aa06a397b24c9edbc
https://doi.org/10.1007/978-94-024-1729-6_2
https://doi.org/10.1007/978-94-024-1729-6_2
Autor:
Paola Frigeri, Luca Seravalli, Sergii Golovynskyi, Baikui Li, Giovanna Trevisi, E. Gombia, Oleksandr I. Datsenko, Junle Qu
Publikováno v:
Microelectronic engineering 230 (2020): 111367-1. doi:10.1016/j.mee.2020.111367
info:cnr-pdr/source/autori:Golovynskyi, S.; Datsenko, O. I.; Seravalli, L.; Trevisi, G.; Frigeri, P.; Gombia, E.; Li, Baikui; Qu, Junle/titolo:Defect levels and interface space charge area responsible for negative photovoltage component in InAs%2FGaAs quantum dot photodetector structure/doi:10.1016%2Fj.mee.2020.111367/rivista:Microelectronic engineering/anno:2020/pagina_da:111367-1/pagina_a:/intervallo_pagine:111367-1/volume:230
info:cnr-pdr/source/autori:Golovynskyi, S.; Datsenko, O. I.; Seravalli, L.; Trevisi, G.; Frigeri, P.; Gombia, E.; Li, Baikui; Qu, Junle/titolo:Defect levels and interface space charge area responsible for negative photovoltage component in InAs%2FGaAs quantum dot photodetector structure/doi:10.1016%2Fj.mee.2020.111367/rivista:Microelectronic engineering/anno:2020/pagina_da:111367-1/pagina_a:/intervallo_pagine:111367-1/volume:230
InAs/GaAs quantum dot photodetector photoresponse spectra consist of quantum dot, wetting layer and GaAs components, however, they frequently contain features attributed to defect levels. In this study we focus on the origin of an unwanted negative p
Autor:
Andrea Baraldi, G. Piacentini, Matteo Bosi, Roberto Fornari, E. Gombia, Andrea Parisini, Maura Pavesi, Filippo Fabbri, Francesco Boschi
Publikováno v:
Materials chemistry and physics
205 (2018): 502–507. doi:10.1016/j.matchemphys.2017.11.023
info:cnr-pdr/source/autori:Pavesi, M.; Fabbri, F.; Boschi, F.; Piacentini, G.; Baraldi, A.; Bosi, M.; Gombia, E.; Parisini, A.; Fornari, R./titolo:epsilon-Ga2O3 epilayers as a material for solar-blind UV photodetectors/doi:10.1016%2Fj.matchemphys.2017.11.023/rivista:Materials chemistry and physics (Print)/anno:2018/pagina_da:502/pagina_a:507/intervallo_pagine:502–507/volume:205
205 (2018): 502–507. doi:10.1016/j.matchemphys.2017.11.023
info:cnr-pdr/source/autori:Pavesi, M.; Fabbri, F.; Boschi, F.; Piacentini, G.; Baraldi, A.; Bosi, M.; Gombia, E.; Parisini, A.; Fornari, R./titolo:epsilon-Ga2O3 epilayers as a material for solar-blind UV photodetectors/doi:10.1016%2Fj.matchemphys.2017.11.023/rivista:Materials chemistry and physics (Print)/anno:2018/pagina_da:502/pagina_a:507/intervallo_pagine:502–507/volume:205
Electrical and optical properties of undoped single-phase epsilon-Ga2O3 epitaxial films prepared by MOCVD are reported. It is shown that this still unexplored polymorph of gallium oxide possesses wide bandgap and very high dark resistivity, thus allo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4819d2e1ed543bf6251539bf51424ded
https://www.sciencedirect.com/science/article/pii/S0254058417309021
https://www.sciencedirect.com/science/article/pii/S0254058417309021
Electroless gold patterning of CdZnTe crystals for radiation detection by scanning pipette technique
Publikováno v:
Crystal Research and Technology. 49:535-539
Recently some of the authors have proposed a new technique to deposit contacts on CdZnTe detectors that combines the standard electroless procedure and the scanning pipette technique. In this work it is shown that by using a 15 micron inner diameter
Autor:
Baikui Li, O. Kulinichenko, Luca Seravalli, Iuliia Golovynska, Paola Frigeri, Junle Qu, Sergii Golovynskyi, Giovanna Trevisi, E. Gombia, Oleksandr I. Datsenko, Serhiy Kondratenko
Publikováno v:
Semiconductor science and technology
34 (2019): 075025-1. doi:10.1088/1361-6641/ab02a1
info:cnr-pdr/source/autori:S Golovynskyi;O I Datsenko;L Seravalli;S V Kondratenko;O Kulinichenko;G Trevisi;P Frigeri;E Gombia;I Golovynska;Baikui Li;Junle Qu/titolo:Kinetics peculiarities of photovoltage in vertical metamorphic InAs%2FInGaAs quantum dot structures/doi:10.1088%2F1361-6641%2Fab02a1/rivista:Semiconductor science and technology (Print)/anno:2019/pagina_da:075025-1/pagina_a:/intervallo_pagine:075025-1/volume:34
34 (2019): 075025-1. doi:10.1088/1361-6641/ab02a1
info:cnr-pdr/source/autori:S Golovynskyi;O I Datsenko;L Seravalli;S V Kondratenko;O Kulinichenko;G Trevisi;P Frigeri;E Gombia;I Golovynska;Baikui Li;Junle Qu/titolo:Kinetics peculiarities of photovoltage in vertical metamorphic InAs%2FInGaAs quantum dot structures/doi:10.1088%2F1361-6641%2Fab02a1/rivista:Semiconductor science and technology (Print)/anno:2019/pagina_da:075025-1/pagina_a:/intervallo_pagine:075025-1/volume:34
Metamorphic InAs/InGaAs quantum dot (QD) structures have been successfully used in optoelectronics as light-emitting and sensing devices. Previous optical and photoelectrical studies showed many benefits such as the shift of the operating range in th