Výsledky vyhledávání

Co/Pd-Based synthetic antiferromagnetic thin films on Au/resist underlayers: towards biomedical applications

Autor: Gianni Barucca, O Lik, E. Giovine, Mariam Hassan, Paolo Mengucci, D. Nissen, Manfred Albrecht, Davide Peddis, Annamaria Gerardino, Sara Laureti, Gaspare Varvaro

Publikováno v: Nanoscale
11 (2019): 21891–21899. doi:10.1039/c9nr06866j
info:cnr-pdr/source/autori:Varvaro, G.; Laureti, S.; Peddis, D.; Hassan, M.; Barucca, G.; Mengucci, P.; Gerardino, A.; Giovine, E.; Lik, O.; Nissen, D.; Albrecht, M./titolo:Co%2FPd-Based synthetic antiferromagnetic thin films on Au%2Fresist underlayers: Towards biomedical applications/doi:10.1039%2Fc9nr06866j/rivista:Nanoscale (Print)/anno:2019/pagina_da:21891/pagina_a:21899/intervallo_pagine:21891–21899/volume:11

Thin film stacks consisting of multiple repeats M of synthetic antiferromagnetic (SAF) [Co/Pd]N/Ru/[Co/Pd]N units with perpendicular magnetic anisotropy were explored as potential starting materials to fabricate free-standing micro/nanodisks, which r

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ef6ac9c91d2ebbef529027a15b27b27
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/67670

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Akademický článek

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Focused ion beam surface treatments of single crystal zinc oxide for device fabrication

Autor: Rodolfo Araneo, Valentina Mussi, E. Giovine, Gianni Barucca, A. Notargiacomo, Antonio Rinaldi, Marialilia Pea

Publikováno v: Materials & Design, Vol 112, Iss, Pp 530-538 (2016)
Materials & design 112 (2016): 530–538. doi:10.1016/j.matdes.2016.09.077
info:cnr-pdr/source/autori:M. Pea (a); V. Mussi (b); G. Barucca (c); E. Giovine (a); A. Rinaldi (d); R. Araneo (e); A. Notargiacomo (a)/titolo:Focused ion beam surface treatments of single crystal zinc oxide for device fabrication/doi:10.1016%2Fj.matdes.2016.09.077/rivista:Materials & design/anno:2016/pagina_da:530/pagina_a:538/intervallo_pagine:530–538/volume:112

We investigated 30 kV Ga+ ions treatments on (0001) single crystal ZnO in order to assess the potentiality of ion beam based device fabrication on such material. A multi-technique approach combining atomic force microscopy, Raman and energy dispersiv

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bffb23671ac1bcb61f9dcf1cbc527f22
http://www.sciencedirect.com/science/article/pii/S0264127516312588

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Akademický článek

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Fabrication of air-bridge sub-micron Schottky junctions on Ge/SOI for THz detection

Autor: R. Bagni 1, E. Giovine 2, S. Carta 2, A. Di Gaspare 2, R. Casini 2, 3, M. Ortolani 3, 4, V. Foglietti 2, F. Evangelisti 1, A. Notargiacomo 2

Publikováno v: Microelectronic engineering Volume 110 (2013): 470–473. doi:10.1016/j.mee.2013.04.017
info:cnr-pdr/source/autori:R. Bagni 1, E. Giovine 2, S. Carta 2, A. Di Gaspare 2, R. Casini 2, 3, M. Ortolani 3, 4, V. Foglietti 2, F. Evangelisti 1, A. Notargiacomo 2,/titolo:Fabrication of air-bridge sub-micron Schottky junctions on Ge%2FSOI for THz detection/doi:10.1016%2Fj.mee.2013.04.017/rivista:Microelectronic engineering/anno:2013/pagina_da:470/pagina_a:473/intervallo_pagine:470–473/volume:Volume 110

We report on the fabrication and electrical characterization of Schottky diodes on epitaxial relaxed germanium for THz detection, which implement both a sub-micron junction area and the air-bridge technology. The small footprint necessary for low cap

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c43d8eb89500a5ca52c111f9ce389fe0
https://doi.org/10.1016/j.mee.2013.04.017

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Fabrication of bulk and epitaxial germanium field emitter arrays by dry etching techniques

Autor: Florestano Evangelisti, E. Giovine, S. Carta, A. Notargiacomo, R. Bagni, Vittorio Foglietti

Publikováno v: Microelectronic engineering 110 (2013): 230–233. doi:10.1016/j.mee.2012.11.024
info:cnr-pdr/source/autori:Carta, S.; Bagni, R.; Giovine, Ennio; Foglietti, Vittorio; Evangelisti, Florestano; Notargiácomo, Andrea/titolo:Fabrication of bulk and epitaxial germanium field emitter arrays by dry etching techniques/doi:10.1016%2Fj.mee.2012.11.024/rivista:Microelectronic engineering/anno:2013/pagina_da:230/pagina_a:233/intervallo_pagine:230–233/volume:110
Microelectronic engineering Volume 110 (2013): 230–233. doi:10.1016/j.mee.2012.11.024
info:cnr-pdr/source/autori:S. Carta 1, R. Bagni 2, E. Giovine 1, V Foglietti 1, F. Evangelisti 2, A. Notargiacomo 1/titolo:Fabrication of bulk and epitaxial germanium field emitter arrays by dry etching techniques/doi:10.1016%2Fj.mee.2012.11.024/rivista:Microelectronic engineering/anno:2013/pagina_da:230/pagina_a:233/intervallo_pagine:230–233/volume:Volume 110

We present the fabrication and characterization of novel high density field emitter arrays (FEAs) on CVDgrown epitaxial germanium on (001) silicon. In particular we propose a heterostructure made up of silicon as substrate and of germanium as active

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::593359fc51f0c51feab896f4c0394a12
http://www.cnr.it/prodotto/i/290217

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