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THz optical beat-note detection with a fast superconducting hot electron bolometer operating up to 31 GHz

Autor: G. Torrioli, A. Forrer, M. Beck, P. Carelli, F. Chiarello, J. Faist, A. Gaggero, E. Giovine, F. Martini, U. Senica, R. Leoni, G. Scalari, S. Cibella

Publikováno v: Optics Express. 31:15942

We study the performance of a hot-electron bolometer (HEB) operating at THz frequencies based on superconducting niobium nitride films. We report on the voltage response of the detector over a large electrical detection bandwidth carried out with dif

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::560e155106aa9a55a070574608a149ad
https://doi.org/10.1364/oe.481081

Co/Pd-Based synthetic antiferromagnetic thin films on Au/resist underlayers: towards biomedical applications

Autor: Gianni Barucca, O Lik, E. Giovine, Mariam Hassan, Paolo Mengucci, D. Nissen, Manfred Albrecht, Davide Peddis, Annamaria Gerardino, Sara Laureti, Gaspare Varvaro

Publikováno v: Nanoscale
11 (2019): 21891–21899. doi:10.1039/c9nr06866j
info:cnr-pdr/source/autori:Varvaro, G.; Laureti, S.; Peddis, D.; Hassan, M.; Barucca, G.; Mengucci, P.; Gerardino, A.; Giovine, E.; Lik, O.; Nissen, D.; Albrecht, M./titolo:Co%2FPd-Based synthetic antiferromagnetic thin films on Au%2Fresist underlayers: Towards biomedical applications/doi:10.1039%2Fc9nr06866j/rivista:Nanoscale (Print)/anno:2019/pagina_da:21891/pagina_a:21899/intervallo_pagine:21891–21899/volume:11

Thin film stacks consisting of multiple repeats M of synthetic antiferromagnetic (SAF) [Co/Pd]N/Ru/[Co/Pd]N units with perpendicular magnetic anisotropy were explored as potential starting materials to fabricate free-standing micro/nanodisks, which r

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ef6ac9c91d2ebbef529027a15b27b27
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/67670

Fabrication of air-bridge sub-micron Schottky junctions on Ge/SOI for THz detection

Autor: R. Bagni 1, E. Giovine 2, S. Carta 2, A. Di Gaspare 2, R. Casini 2, 3, M. Ortolani 3, 4, V. Foglietti 2, F. Evangelisti 1, A. Notargiacomo 2

Publikováno v: Microelectronic engineering Volume 110 (2013): 470–473. doi:10.1016/j.mee.2013.04.017
info:cnr-pdr/source/autori:R. Bagni 1, E. Giovine 2, S. Carta 2, A. Di Gaspare 2, R. Casini 2, 3, M. Ortolani 3, 4, V. Foglietti 2, F. Evangelisti 1, A. Notargiacomo 2,/titolo:Fabrication of air-bridge sub-micron Schottky junctions on Ge%2FSOI for THz detection/doi:10.1016%2Fj.mee.2013.04.017/rivista:Microelectronic engineering/anno:2013/pagina_da:470/pagina_a:473/intervallo_pagine:470–473/volume:Volume 110

We report on the fabrication and electrical characterization of Schottky diodes on epitaxial relaxed germanium for THz detection, which implement both a sub-micron junction area and the air-bridge technology. The small footprint necessary for low cap

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c43d8eb89500a5ca52c111f9ce389fe0
https://doi.org/10.1016/j.mee.2013.04.017

MESFETs on H-terminated Single Crystal Diamond

Autor: Maria Cristina Rossi, Stefano Carta, Paolo Calvani, Ernesto Limiti, E. Giovine, B Pasciuto, Gennaro Conte, Andrey Bolshakov, Federica Cappelluti, G. V. Sharonov, Victor Ralchenko

Publikováno v: Diamond Electronics and Bioelectronics-Fundamentals to Applications III, 2010
info:cnr-pdr/source/autori:P. Calvani, M.C. Rossi, G. Conte, S. Carta, E. Giovine, B. Pasciuto, E. Limiti, F. Cappelluti, V. Ralchenko, A. Bolshakov, G. Sharonov/congresso_nome:Diamond Electronics and Bioelectronics-Fundamentals to Applications III/congresso_luogo:/congresso_data:2010/anno:2010/pagina_da:/pagina_a:/intervallo_pagine
Scopus-Elsevier
1203 (2010).
info:cnr-pdr/source/autori:P. Calvani, M.C. Rossi, G. Conte, S. Carta, E. Giovine, B. Pasciuto, E. Limiti, F. Cappelluti, V. Ralchenko, A. Bolshakov, G. Sharonov/titolo:MESFETs on H-terminated Single Crystal Diamond/doi:/rivista:/anno:2010/pagina_da:/pagina_a:/intervallo_pagine:/volume:1203
2009 MRS Fall Meeting, pp. 185–189, 30/11-03/12/2009
info:cnr-pdr/source/autori:Calvani, P.; Rossi, M. C.; Conte, G.; Carta, S.; Giovine, E.; Pasciuto, B.; Limiti, E.; Cappelluti, F.; Ralchenko, V.; Bolshakov, A.; Sharonov, G./congresso_nome:2009 MRS Fall Meeting/congresso_luogo:/congresso_data:30%2F11-03%2F12%2F2009/anno:2010/pagina_da:185/pagina_a:189/intervallo_pagine:185–189

Epitaxial diamond films were deposited on polished single crystal Ib type HPHT diamond plates of (100) orientation by microwave CVD. The epilayers were used for the fabrication of surface channel MESFET structures having sub-micrometer gate length in

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9aab1d7f2a1b7b74ab965ba9946733b0
https://publications.cnr.it/doc/81812