Homodyne mixing at 150 GHz in a high electron mobility transistor

Autor: M. Ortolani (a), A. Di Gaspare (a), E. Giovine (a), F. Evangelisti (a), A. Dori (b), E. Giovenale (b), G. P. Gallerano (b), A. Cetronio (c), C. Lanzieri (c), M. Peroni (c), V. Foglietti (a)

Publikováno v: IRMMW-THz 2008, pp. 462–463, Pasadena, California,USA, SEP 15-19, 2008
info:cnr-pdr/source/autori:M. Ortolani (a), A. Di Gaspare (a), E. Giovine (a), F. Evangelisti (a), A. Dori (b), E. Giovenale (b), G. P. Gallerano (b), A. Cetronio (c), C. Lanzieri (c), M. Peroni (c) and V. Foglietti (a)/congresso_nome:IRMMW-THz 2008/congresso_luogo:Pasadena, California,USA/congresso_data:SEP 15-19, 2008/anno:2008/pagina_da:462/pagina_a:463/intervallo_pagine:462–463

We explore the possibility of using an AlGaN/GaN high electron mobility transistor (HEMT) as a free-space coupled homodyne mixer. We used 150 GHz radiation from a Free Electron Laser, hence 5 times higher than the HEMT nominal band center at 30 GHz.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::70789aa36d0d67f6043b2e7507863072
http://www.cnr.it/prodotto/i/81694