Zobrazeno 1 - 10
of 26
pro vyhledávání: '"E. Giard"'
Autor:
Julien Jaeck, E. Giard, Isabelle Ribet-Mohamed, Philippe Christol, Jean Nghiem, Jean-Baptiste Rodriguez, Marcel Caes, Riad Haïdar, Eric Costard
Publikováno v:
Proceedings of SPIE
QUANTUM SENSING AND NANO ELECTRONICS AND PHOTONICS XIV
QUANTUM SENSING AND NANO ELECTRONICS AND PHOTONICS XIV, 2017, San Francisco, United States. pp.UNSP 101111D, ⟨10.1117/12.2251160⟩
QUANTUM SENSING AND NANO ELECTRONICS AND PHOTONICS XIV
QUANTUM SENSING AND NANO ELECTRONICS AND PHOTONICS XIV, 2017, San Francisco, United States. pp.UNSP 101111D, ⟨10.1117/12.2251160⟩
This paper reports studies on spatial characteristics of Mid Wave InfraRed (MWIR) InAs/GaSb superlattices (T2SL) photodetectors. Modulation Transfer Function (MTF) measurements on commercial T2SL MWIR Focal Plane Array (FPA) are reported, using a Con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1410c04722e5c4bec88d8985f94c3a6d
https://hal.archives-ouvertes.fr/hal-01628443
https://hal.archives-ouvertes.fr/hal-01628443
Autor:
Philippe Christol, Abigail Licht, E. Giard, Rémi Rossignol, Isabelle Ribet-Mohamed, Jean-Baptiste Rodriguez, M. Delmas
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2016, 119 (17), ⟨10.1063/1.4948670⟩
Journal of Applied Physics, American Institute of Physics, 2016, 119 (17), ⟨10.1063/1.4948670⟩
GaSb-rich superlattice (SL) p-i-n photodiodes grown by molecular beam epitaxy were studied theoretically and experimentally in order to understand the poor dark current characteristics typically obtained. This behavior, independent of the SL-grown ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c1305beb22fa2a07b8861ea3e5455153
https://orca.cardiff.ac.uk/id/eprint/108998/1/1.4948670.pdf
https://orca.cardiff.ac.uk/id/eprint/108998/1/1.4948670.pdf
Autor:
Wilfried Desrat, E. Giard, R. Taalat, I. Ribet-Mohamed, Sylvie Contreras, Jean-Baptiste Rodriguez, Philippe Christol, M. Delmas, Leszek Konczewicz
Publikováno v:
Infrared Physics & Technology
8th International Workshop on Quantum Structure Infrared Photodetectors (QSIP)
8th International Workshop on Quantum Structure Infrared Photodetectors (QSIP), Jun 2014, Santa Fe, United States. pp.76-80, ⟨10.1016/j.infrared.2014.09.036⟩
8th International Workshop on Quantum Structure Infrared Photodetectors (QSIP)
8th International Workshop on Quantum Structure Infrared Photodetectors (QSIP), Jun 2014, Santa Fe, United States. pp.76-80, ⟨10.1016/j.infrared.2014.09.036⟩
International audience; Midwave infrared (MWIR) InAs/GaSb superlattice (SL) photodiode with a dopant-free p–n junction was fabricated by molecular beam epitaxy on GaSb substrate. Depending on the thickness ratio between InAs and GaSb layers in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::21c9944100816ed01d05500d59119e20
https://orca.cardiff.ac.uk/id/eprint/108999/1/Delmas_QSIP-2014_M2-2.pdf
https://orca.cardiff.ac.uk/id/eprint/108999/1/Delmas_QSIP-2014_M2-2.pdf
Publikováno v:
Infrared Physics and Technology
Infrared Physics and Technology, Elsevier, 2015, 70, pp.103-106. ⟨10.1016/j.infrared.2014.07.034⟩
QSIP
QSIP, Jun 2014, SANTA FE, United States
Infrared Physics and Technology, Elsevier, 2015, 70, pp.103-106. ⟨10.1016/j.infrared.2014.07.034⟩
QSIP
QSIP, Jun 2014, SANTA FE, United States
International audience; In this paper, quantum efficiency (QE) measurements performed on type-II InAs/GaSb superlattice (T2SL) photodiodes operating in the mid-wavelength infrared domain, are reported. Several comparisons were made in order to determ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3e53fee5e24bd1472fa5c1f036eecaa1
https://hal.archives-ouvertes.fr/hal-01626346
https://hal.archives-ouvertes.fr/hal-01626346
Autor:
Julien Jaeck, M. Carras, Philippe Christol, Riad Haïdar, M. Delmas, V. Trinite, E. Giard, J. Imbert, Jean-Baptiste Rodriguez, Sophie Derelle
Publikováno v:
Infrared Physics and Technology
Infrared Physics and Technology, Elsevier, 2015, 70, pp.81-86. ⟨10.1016/j.infrared.2014.09.035⟩
Infrared Physics and Technology, 2015, 70, pp.81-86. ⟨10.1016/j.infrared.2014.09.035⟩
Infrared Physics and Technology, Elsevier, 2015, 70, pp.81-86. ⟨10.1016/j.infrared.2014.09.035⟩
Infrared Physics and Technology, 2015, 70, pp.81-86. ⟨10.1016/j.infrared.2014.09.035⟩
An 18-band k.p formalism has been developed to determine the band structure and wavefunctions of InAs/GaSb type II superlattices (T2SL). Bandgap results are in good agreement with measurements for symetrical superlattices. Thus, we are able to calcul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9635935c68e3ca5285c566f8d8330da2
https://hal.archives-ouvertes.fr/hal-01626343
https://hal.archives-ouvertes.fr/hal-01626343
Autor:
Sophie Derelle, Philippe Christol, E. Giard, I. Ribet-Mohamed, M. Delmas, V. Trinite, Jean-Baptiste Rodriguez, J. Imbert
Publikováno v:
SPIE OPTO
SPIE OPTO, 2015, San Francisco, United States. ⟨10.1117/12.2076569⟩
SPIE OPTO, 2015, San Francisco, United States. ⟨10.1117/12.2076569⟩
InAs/GaSb superlattice (SL) is a peculiar quantum system for infrared detection, where electrical and optical properties are directly governed by the composition and the periodicity of the InAs/GaSb cell. Indeed, several structures with different InA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5774ed4661778755485b2194c17f9919
https://hal.archives-ouvertes.fr/hal-01756182
https://hal.archives-ouvertes.fr/hal-01756182
Autor:
Nathalie Bardou, T. Viale, E. Giard, Julien Jaeck, R. Taalat, E. Steveler, Jean-Baptiste Rodriguez, Isabelle Ribet-Mohamed, M. Delmas, F. Boulard, Philippe Christol, Riad Haïdar
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2014, 116 (4), ⟨10.1063/1.4890309⟩
Journal of Applied Physics, American Institute of Physics, 2014, 116 (4), ⟨10.1063/1.4890309⟩
We present in this paper a comparison between different type-II InAs/GaSb superlattice (T2SL) photodiodes and focal plane array (FPA) in the mid-wavelength infrared domain to understand which phenomenon drives the performances of the T2SL structure i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ddf3e79269439522b699c1f08ea1ff34
https://hal.archives-ouvertes.fr/hal-01623607
https://hal.archives-ouvertes.fr/hal-01623607
Autor:
M. Delmas, Philippe Christol, Isabelle Ribet-Mohamed, R. Taalat, E. Giard, Jean-Baptiste Rodriguez
Publikováno v:
Journal of the European Optical Society : Rapid publications
Journal of the European Optical Society : Rapid publications, European Optical Society, 2014, 9, ⟨10.2971/jeos.2014.14022⟩
Journal of the European Optical Society : Rapid publications, European Optical Society, 2014, 9, ⟨10.2971/jeos.2014.14022⟩
We present a full characterization of the radiometric performances of a type-II InAs/GaSb superlattice pin photodiode operating in the mid-wavelength infrared domain. We first focused our attention on quantum efficiency, responsivity and angular resp
Autor:
Julien Jaeck, Jean-Baptiste Rodriguez, Isabelle Ribet-Mohamed, R. Taalat, E. Giard, M. Delmas, Philippe Christol
Publikováno v:
SPIE Defense + Security
SPIE Defense + Security, Apr 2014, Baltimore, United States. ⟨10.1117/12.2050426⟩
SPIE Defense + Security, Apr 2014, Baltimore, United States. ⟨10.1117/12.2050426⟩
We first present an electro-optical characterization of the radiometric performances of a type-II InAs/GaSb superlattice (T2SL) pin photodiode operating in the mid-wavelength infrared domain. This photodiode was grown with an InAs-rich structure. We
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cb443e599bfff509d9839ab8ea64191a
https://hal.archives-ouvertes.fr/hal-01786508
https://hal.archives-ouvertes.fr/hal-01786508
Autor:
J. Imbert, E. Giard, R. Taalat, M. Delmas, V. Trinite, Isabelle Ribet-Mohamed, Jean-Baptiste Rodriguez, Sophie Derelle, Philippe Christol
Publikováno v:
SPIE OPTO
SPIE OPTO, 2014, San Francisco, United States. ⟨10.1117/12.2039200⟩
SPIE OPTO, 2014, San Francisco, United States. ⟨10.1117/12.2039200⟩
In this communication, we examine the influence of the SL period of InAs/GaSb superlattice (SL), with diverse InAs to GaSb thickness ratio, on the material and device properties of midwave infrared pin photodiodes. Three SL devices made of three diff