Zobrazeno 1 - 10
of 11
pro vyhledávání: '"E. G. Yeo"'
Publikováno v:
ECS Solid State Letters. 3:Q36-Q39
The improved resistive switching performance of TaOx by introducing ZnO was reported in this paper. By co-sputtering, the ZnTaOx device shows better endurance, lower operating voltage and more uniform resistance distribution. The improvement is mainl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::77fc2ac18a670d6785d524bb27f60ffa
https://doi.org/10.1149/2.0101407ssl
https://doi.org/10.1149/2.0101407ssl
Autor:
F. Ernult, E. K. Chua, E. G. Yeo, Kian Guan Lim, C. C. Yeap, Weijie Wang, M. H. Li, Leong Tat Law
Publikováno v:
2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).
GeTe phase change material doped with 12 to 22 atomic percent TiO 2 were deposited and characterized. The crystallization of amorphous doped GeTe is inhibited by the incorporation of TiO 2 dopant up to 22 % as depicted by the increasing activation en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9479171d9c7eb7c73c6e54e33d1d9ee6
https://doi.org/10.1109/edssc.2015.7285075
https://doi.org/10.1109/edssc.2015.7285075
Publikováno v:
2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS).
A novel strained SiGe/TaO x /Ta RRAM device is successfully demonstrated via a fully CMOS compatible process. The bottom electrode (BE) is made of strained single crystalline SiGe layer where both n type and p type SiGe layer as the BE. Typical bipol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba85cb03d9f05f971cf944d9ad641342
https://doi.org/10.1109/nvmts.2014.7060849
https://doi.org/10.1109/nvmts.2014.7060849
Publikováno v:
2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS).
Ta/TaO x -based Resistive Random Access Memory (RRAM) is studied using current-sweeping (I-sweep) DC switching operation. The self-compliance SET program is achieved to prevent the device from current overshoot. The SET current and voltage are compar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::587a174b7a2c44cfeb4deb4e42fc1c1b
https://doi.org/10.1109/nvmts.2014.7060851
https://doi.org/10.1109/nvmts.2014.7060851
Autor:
M. H. Li, Weijie Wang, C. C. Yeap, E. K. Chua, Leong Tat Law, F. Ernult, Kian Guan Lim, E. G. Yeo
Publikováno v:
2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS).
Varying ZrO 2 doped GeTe phase change material of atomic percent greater than 10% were deposited and characterized. It was discovered that the crystallization of amorphous doped GeTe is suppressed by the incorporation of ZrO 2 at lower concentration
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b9ad2a7b1d8cebb65e313f79190c141
https://doi.org/10.1109/nvmts.2014.7060842
https://doi.org/10.1109/nvmts.2014.7060842
Publikováno v:
MRS Proceedings. 918
In this paper, ultra-high memory density and high speed non-volatile phase change random access memory (PCRAM) was investigated by material engineering. The melting point, crystallization point and activation energy of crystallization of the Bismuth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63e81f1cea7ee1e70d7eb46dd05cdc9c
https://doi.org/10.1557/proc-0918-h05-05-g06-05
https://doi.org/10.1557/proc-0918-h05-05-g06-05
Parasitic capacitance effect on programming performance of phase change random access memory devices
Publikováno v:
Applied Physics Letters. 96:043506
Parasitic capacitance has increasing implications on the programming performance of phase change random access memory (PCRAM) devices due to increased scaling and high frequency operation. PCRAM devices with larger parasitic capacitance were found to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b079b0a4486d4f1348b2b0803978d332
https://doi.org/10.1063/1.3298368
https://doi.org/10.1063/1.3298368
Publikováno v:
Applied Physics Letters. 94:243504
The transient current waveform during a crystallization process in a phase change memory device was measured and analyzed. It revealed two important time parameters, which were termed as delay time and current recovery time. A link between this trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3fb7132e66642970c0fd4b8fe321c04
https://doi.org/10.1063/1.3155200
https://doi.org/10.1063/1.3155200
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.