Zobrazeno 1 - 10
of 10
pro vyhledávání: '"E. G. Tishkovskii"'
Publikováno v:
Instruments and Experimental Techniques. 51:438-442
An epithermal neutron source based on a tandem accelerator is being constructed at the Budker Institute of Nuclear Physics for use in neutron capture therapy at a cancer clinic. A lithium neutron-generating target obtained by deposition of lithium on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98867fb5d5c6a627c6973260161e18dd
https://doi.org/10.1134/s0020441208030214
https://doi.org/10.1134/s0020441208030214
Autor:
A. A. Taskin, E. G. Tishkovskii
Publikováno v:
Semiconductors. 36:605-614
The results of studying the formation of selenium-related complexes in silicon are reported. On the basis of analyzing the kinetics of the donor-center formation, the composition of the simplest complexes and the main parameters of their formation we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b95dc5e2968095a3fc699f4191c32ad
https://doi.org/10.1134/1.1485656
https://doi.org/10.1134/1.1485656
Publikováno v:
Russian Microelectronics. 31:277-281
The effect of isothermal annealing on the depth profiles of nitrogen atoms implanted into synthetic diamonds is studied by secondary-ion mass spectrometry. The annealing is performed under vacuum at 1400°C for 1, 5, or 20 h. It is found that the dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40ad08f38249687f625214de08bd6a55
https://doi.org/10.1023/a:1020230823633
https://doi.org/10.1023/a:1020230823633
Estimation of the ultimate efficiency of a three-pin solar cell based on the GaAs/Si heterostructure
Publikováno v:
Optoelectronics, Instrumentation and Data Processing. 47:482-484
The ultimate efficiency of a three-pin solar cell based on the GaAs/Si structure is calculated by means of numerical simulation in a diffusion-drift approximation. Dependences of the efficiency on the GaAs layer thickness and the density of dislocati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::325c73c3c966c470eb5aea1da6227ea2
https://doi.org/10.3103/s8756699011050293
https://doi.org/10.3103/s8756699011050293
Publikováno v:
Semiconductors. 34:629-633
The special features of redistribution of phosphorus implanted into silicon wafers with a high concentration of boron (NB=2.5×1020 cm−3) were studied. It is shown that, in silicon initially doped heavily with boron, the broadening of concentration
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::790d17e447ef5197c8ca3f3c3c246fe1
https://doi.org/10.1134/1.1188043
https://doi.org/10.1134/1.1188043
Publikováno v:
Semiconductors. 34:312-318
The spatial distribution of selenium atoms implanted in silicon was studied by secondary-ion mass spectrometry after annealing in the temperature range of 600–1200°C. For implantation doses exceeding the amorphization dose for silicon, formation o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffd048c5e861fcf99199eacf14240e8e
https://doi.org/10.1134/1.1187978
https://doi.org/10.1134/1.1187978
Autor:
A. A. Taskin, E. G. Tishkovskii
Publikováno v:
Semiconductors. 32:1162-1167
The kinetics of the formation of impurity complexes associated with selenium is investigated. The stationary density of complexes is obtained as a function of temperature and the density of selenium atoms that occupy silicon lattice sites. It is esta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67e37d2525647015b217b180c3a9cf4d
https://doi.org/10.1134/1.1187582
https://doi.org/10.1134/1.1187582
Autor:
E. G. Tishkovskii, V. I. Obodnikov, B. I. Fomin, A. M. Myasnikov, E. I. Cherepov, V. G. Seryapin
Publikováno v:
Semiconductors. 31:279-282
The temperature range in which oscillating impurity distributions are formed in heavily boron-doped silicon irradiated with boron ions B+ is found. It is hypothesized that the effect is associated with boron clustering processes which proceed more ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8606b687393ac04abc9ad2908c260ffb
https://doi.org/10.1134/1.1187127
https://doi.org/10.1134/1.1187127
Autor:
V. I. Obodnikov, E. G. Tishkovskii
Publikováno v:
Semiconductors. 32:372-374
The dependence of the boron distribution on the initial boron concentration in the range (1–9)×1019 cm−3 was investigated by secondary-ion mass-spectrometry (SIMS) after heat treatment of boron-ion implanted silicon at 900 °C. It was found that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::334c492050e54a785547b981258e88da
https://doi.org/10.1134/1.1187398
https://doi.org/10.1134/1.1187398
Autor:
B. I. Fomin, E. I. Cherepov, A. M. Myasnikov, V. G. Seryapin, V. I. Obodnikov, E. G. Tishkovskii
Publikováno v:
Semiconductors. 31:600
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b3d98bd9520341d918756c37bd2992f
https://doi.org/10.1134/1.1187225
https://doi.org/10.1134/1.1187225