A multi-technique approach to understanding delithiation damage in LiCoO2 thin films

Autor: E. Salagre, S. Quílez, R. de Benito, M. Jaafar, H. P. van der Meulen, E. Vasco, R. Cid, E. J. Fuller, A. A. Talin, P. Segovia, E. G. Michel, C. Polop

Publikováno v: Scientific Reports, Vol 11, Iss 1, Pp 1-12 (2021)

Abstract We report on the delithiation of LiCoO2 thin films using oxalic acid (C2H2O4) with the goal of understanding the structural degradation of an insertion oxide associated with Li chemical extraction. Using a multi-technique approach that inclu

Externí odkaz: https://doaj.org/article/8c64e14c87be4599a335dec82392a134

The (3 × 2) β-SiC(001) surface reconstruction investigated by photoelectron diffraction in the backscattering regime

Autor: Patrick Soukiassian, E. Rotenberg, J. D. Denlinger, D. Dunham, A. Tejeda, E. G. Michel

Publikováno v: Journal de Physique IV (Proceedings). 132:49-55

The atomic positions of the (3x2) reconstruction of the cubic polytype of SiC(001) are determined by using photoelectron diffraction in the backscattering regime. The comparison of multiple scattering spherical wave calculations with experimental dat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4eda1a7c3ec31ba8f3815014483cff96
https://doi.org/10.1051/jp4:2006132010

Surface x-ray diffraction analysis using a genetic algorithm: the case of Sn/Cu(100)-[Formula: see text]

Autor: J, Martínez-Blanco, V, Joco, C, Quirós, P, Segovia, E G, Michel

Publikováno v: Journal of physics. Condensed matter : an Institute of Physics journal. 21(13)

The application of genetic algorithms to the analysis of surface x-ray diffraction data is discussed and the implementation of a genetic algorithm of evolutionary type is described in detail. The structure of Sn/Cu(100)-[Formula: see text] is determi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::39a6906fa721e0d6b0927c78d45a371a
https://pubmed.ncbi.nlm.nih.gov/21817486

Electronic structure of Sn/Cu(100)-(2?2 × 2?2)R45°

Autor: J Martínez-Blanco, V Joco, J Fujii, P Segovia, E G Michel

Publikováno v: Journal of physics. Condensed matter (Online) 21 (2009): 055001. doi:10.1088/0953-8984/21/5/055001
info:cnr-pdr/source/autori:J Martínez-Blanco; V Joco; J Fujii; P Segovia; E G Michel/titolo:Electronic structure of Sn%2FCu(100)-(2?2 × 2?2)R45°/doi:10.1088%2F0953-8984%2F21%2F5%2F055001/rivista:Journal of physics. Condensed matter (Online)/anno:2009/pagina_da:055001/pagina_a:/intervallo_pagine:055001/volume:21

We present measurements of the Fermi surface and underlying band structure of Sn/Cu(100)-(2?2 × 2?2)R45° . This phase is observed for a coverage of 0.60-0.65 monolayers. Its electronic structure is characterized by a free-electron-like surface band

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::d1d387e635131ced95b371bee8277642

Observation of a Mott insulating ground state for Sn/Ge(111) at low temperature

Autor: R, Cortés, A, Tejeda, J, Lobo, C, Didiot, B, Kierren, D, Malterre, E G, Michel, A, Mascaraque

Publikováno v: Physical review letters. 96(12)

We report an investigation on the properties of 0.33 ML of Sn on Ge(111) at temperatures down to 5 K. Low-energy electron diffraction and scanning tunneling microscopy show that the (3x3) phase formed at approximately 200 K, reverts to a new ((square

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::3b2a78b05d831cf0fd0a52cfde8dff62
https://pubmed.ncbi.nlm.nih.gov/16605931