Zobrazeno 1 - 10
of 22
pro vyhledávání: '"E. G. Gule"'
ZnO nanoparticles embedded in polyvinylpyrrolidone matrix were fabricated in situ by colloidal method with environmentally friendly reaction conditions. The colloid was used to form solid nanocomposite polyvinylpyrrolidone/ZnO, and optical properties
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25a62b59fb67d0259a15dfe57cccc99c
http://essuir.sumdu.edu.ua/handle/123456789/68422
http://essuir.sumdu.edu.ua/handle/123456789/68422
Publikováno v:
Materials Chemistry and Physics. 148:77-81
Electrical d.c. conductivity of nano-CdS/polyvinyl alcohol composites with different nanoparticle concentrations and its temperature dependence were studied. The composites demonstrate increasing resistivity with CdS nanoparticles content. The curren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a749e1dcfe557aa0202b39867fb1a508
https://doi.org/10.1016/j.matchemphys.2014.07.014
https://doi.org/10.1016/j.matchemphys.2014.07.014
Autor:
A. I. Savchuk, K.S. Volkov, G. Yu. Rudko, Igor Davydenko, O. I. Olar, E. G. Gule, V. I. Fediv
Publikováno v:
Semiconductor Physics Quantum Electronics and Optoelectronics. 17:46-51
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::759e48159c90a7c9ce111db89e3b4ba1
https://doi.org/10.15407/spqeo17.01.046
https://doi.org/10.15407/spqeo17.01.046
Publikováno v:
Nanoscale Research Letters
The conditions for growing CdS nanoparticles suitable for the visualization of biological tissues were theoretically studied and experimentally checked. The optimal ranges for pH values and precursors' concentrations were determined. The applicabilit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d30557db29580c4a023013f078114cfb
https://doi.org/10.1186/s11671-016-1300-5
https://doi.org/10.1186/s11671-016-1300-5
Autor:
L. I. Veligura, Viktor Strelchuk, N. V. Sopinskii, N. A. Vlasenko, P. F. Oleksenko, E. G. Gule, M. A. Mukhlyo, Andrii Nikolenko
Publikováno v:
Semiconductors. 46:323-329
The photoluminescence of SiO x films deposited on c-Si wafers by the thermal evaporation of SiO in a vacuum and, for the first time, doped with ErF3 by coevaporation is studied. It is shown that, like undoped SiO x films, the unannealed SiO x :ErF3 f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb9f5645af66208cc4e8ff763692cf39
https://doi.org/10.1134/s1063782612030232
https://doi.org/10.1134/s1063782612030232
Autor:
P. F. Oleksenko, E. G. Manoilov, E. G. Gule, M. A. Mukhlyo, L. I. Veligura, N. V. Sopinskii, N. A. Vlasenko
Publikováno v:
Semiconductors. 45:1414-1419
A band with a peak at 890 nm is detected in the photoluminescence spectra of SiO x (x ≈ 1.3) films deposited by thermal evaporation of SiO and annealed in air at 650–1150°C. The 890-nm band appears after low-temperature (∼650°C) annealing and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1766170bb7992f8a53621b7ade824f6e
https://doi.org/10.1134/s1063782611110273
https://doi.org/10.1134/s1063782611110273
Autor:
Z. L. Denisova, O. S. Litvin, N. V. Sopinskii, N. A. Vlasenko, M. A. Mukhlyo, L. I. Veligura, E. G. Gule, P. F. Oleksenko
Publikováno v:
Semiconductors. 45:587-592
The spectrum of the photoconductivity induced by the polarization field of charges at surface states and traps in the film bulk has been analyzed to determine the energy band diagram at the c-Si-SiOx interface and the changes in the electronic states
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::faaa29d7dbaeecb10391fc29daf70ed7
https://doi.org/10.1134/s1063782611050289
https://doi.org/10.1134/s1063782611050289
Publikováno v:
physica status solidi (b). 245:2756-2760
The effect of enhanced hydrostatic pressure (HP, (10–12) × 108 Pa) on thermally stimulated phase decomposition of silicon suboxide layers processed at 450–1000 °C was investigated by infrared spectroscopy and photoluminescence measurements. HP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c15027cf67906713c37373d0c73ec73
https://doi.org/10.1002/pssb.200844049
https://doi.org/10.1002/pssb.200844049
Autor:
I. Z. Indutniĭ, P. E. Shepelyavyĭ, M. V. Muravskaya, V. V. Voitovich, I. Lisovskyy, E. G. Gule
Publikováno v:
Semiconductors. 42:576-579
The spectra of infrared transmittance and photoluminescence of thin-film nc-Si/SiO2 structures containing nanocrystalline silicon (nc-Si) and subjected to ionizing radiation (60Co) in the dose range D= 104−107 rad are studied. It is shown for the f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51fb0cde21e683af4ff135f2ce85d440
https://doi.org/10.1134/s1063782608050151
https://doi.org/10.1134/s1063782608050151
Publikováno v:
Semiconductors. 37:681-685
Dependences of spectra, intensity, and relaxation time of superradiance in GaAs/InxGa1−xAs/GaAs quantum heterostructures on the excitation power density in the range of 1×10−3–1×106 W/cm2 are investigated. It is shown for the first time that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b481f04c709160f0cd12224de9ecd2df
https://doi.org/10.1134/1.1582535
https://doi.org/10.1134/1.1582535