Zobrazeno 1 - 10
of 18
pro vyhledávání: '"E. G. Chizhevskii"'
Autor:
G. V. Rybal’chenko, A. Yu. Tsvetkov, Yu. G. Selivanov, E. G. Chizhevskii, S. Yu. Gavrilkin, V. P. Martovitskii, A. Yu. Kuntsevich, M. I. Bannikov
Publikováno v:
JETP Letters. 111:151-156
A structural reason for superconductivity in a Cu-, Sr-, or Nb-atom-doped Bi2Se3 topological insulator is still unclear. To understand this reason, a codoping approach has been developed and BaySrxBi2Se3 single crystals with different x and y values
Autor:
A Yu Kuntsevich, M A Bryzgalov, V A Prudkoglyad, V P Martovitskii, Yu G Selivanov, E G Chizhevskii
Publikováno v:
New Journal of Physics, Vol 20, Iss 10, p 103022 (2018)
An archetypical layered topological insulator Bi _2 Se _3 becomes superconductive upon doping with Sr, Nb or Cu. Superconducting properties of these materials in the presence of in-plane magnetic field demonstrate spontaneous symmetry breaking: 180 ^
Externí odkaz:
https://doaj.org/article/90098383fbc64fec94902a9ddbfaabfc
Autor:
Vladimir Rumyantsev, V. I. Gavrilenko, I. I. Zasavitskii, E. G. Chizhevskii, K. V. Maremyanin, A. V. Ikonnikov, L. S. Bovkun
Publikováno v:
Semiconductors. 52:1590-1594
On the basis of a Pb1 –xSnxSe solid solution, long-wavelength diffusion injection lasers with laser generation up to a record long wavelength of 50.4 μm are created and studied. Pb1 –xSnxSe single crystals are grown from the vapor phase under th
Publikováno v:
JETP Letters. 106:526-533
The magnetotransport in Bi2Se3 thin films with magnetic Eu dopants is studied within the range of low applied magnetic fields. With the increase in the doping level, the saturation of the dephasing length on cooling is observed. This can be related t
Autor:
K. V. Maremyanin, I. I. Zasavitskii, A. V. Ikonnikov, Vladimir Rumyantsev, L. S. Bovkun, V. I. Gavrilenko, E. G. Chizhevskii
Publikováno v:
Semiconductors. 50:1669-1672
Diffusion injection lasers based on Pb1 – x Sn x Se alloy, emitting in a wide spectral range of 10–46.5 μm depending on the composition and temperatures are fabricated. A technology for growing high-quality single crystals from the vapor phase u
Autor:
B. A. Aronzon, Yu. G. Selivanov, E. I. Nekhaeva, A. Yu. Kuntsevich, V. A. Prudkoglyad, L. N. Oveshnikov, E. G. Chizhevskii
Publikováno v:
JETP Letters. 104:629-634
The magnetoconductivity of thin Bi2Se3 films covered by a protective Se layer and grown at (111) BaF2 substrates is studied. It is shown that the negative magnetoconductivity observed at low magnetic fields and caused by the effect of weak antilocali
Publikováno v:
Semiconductors. 50:228-234
The optical properties of epitaxial layers and heterostructures based on Pb1–xEuxTe alloys (0 ⩽ x ⩽ 1) are analyzed in the context of designing Bragg mirrors and vertical-cavity surface-emitting lasers for the midinfrared spectral range. It is
Autor:
L N, Oveshnikov, Ya I, Rodionov, K I, Kugel, I A, Karateev, A L, Vasiliev, Yu G, Selivanov, E G, Chizhevskii, I S, Burmistrov, B A, Aronzon
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 30(44)
We report the results of experimental and theoretical studies of Eu-doped Bi
Publikováno v:
JETP Letters. 99:187-190
The infrared reflection and transmission spectra of Bi2Te2Se single crystals grown by the modified Bridgeman method have been studied in the spectral range of 30–10000 cm−1 at temperatures of 5–300 K. The bandgap and its temperature dependence,
Autor:
S. V. Morozov, Vladimir Rumyantsev, S. A. Dvoretskii, E. G. Chizhevskii, I. I. Zasavitskii, Nikolay N. Mikhailov, K. R. Umbetalieva, A. M. Kadykov, V. I. Gavrilenko, K. V. Maremyanin, L. S. Bovkun
Publikováno v:
2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON).
We report recent results on THz lasing in PbSnSe and HgCdTe. The wavelength of 46.3 microns was achieved in a PbSnSe laser with diffusion p-n junction. In HgCdTe waveguide structure with quantum wells (QWs) we demonstrate twofold increase in stimulat