Zobrazeno 1 - 10
of 36
pro vyhledávání: '"E. G. Burkhardt"'
Autor:
Mehdi Hatamian, Richard Howard, Lawrence A. Hornak, B. L. Straughn, C. D. Brandle, E. G. Burkhardt, P. M. Mankiewich, Stuart K. Tewksbury
Publikováno v:
IEEE MTT-S International Microwave Symposium Digest.
Electrical time-domain measurements and transmission response measurements were made using a 31-cm-long YBaCuO superconducting thin-film microstrip line and a YBaCuO ground plane, each on separate 1-cm LaGaO/sub 3/ substrates, with a 125- mu m sapphi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cc2e2b86bbab7f6773a00b72d498e17
https://doi.org/10.1109/mwsym.1989.38803
https://doi.org/10.1109/mwsym.1989.38803
Autor:
B. L. Straughn, E. G. Burkhardt, J. M. Graybeal, James S. Brooks, Richard Howard, P. M. Mankiewich, A. G. Swanson, J.D. Hettinger, W. J. Skocpol
Publikováno v:
Physical Review Letters. 62:2044-2047
The critical current density ${J}_{c}$(B,T) is measured to 15 T for c-axis-perpendicular expitaxial thin films of ${\mathrm{YBa}}_{2}$${\mathrm{Cu}}_{3}$${\mathrm{O}}_{7}$ with ${J}_{c}$(0,77 K) of order ${10}^{6}$ A/${\mathrm{cm}}^{2}$. Even in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77504286795b0c4b9298e65244202cee
https://doi.org/10.1103/physrevlett.62.2044
https://doi.org/10.1103/physrevlett.62.2044
Autor:
B. L. Straughn, C. D. Brandle, Stuart K. Tewksbury, E. G. Burkhardt, Richard Howard, Lawrence A. Hornak, Mehdi Hatamian, P. M. Mankiewich
Publikováno v:
Journal of Applied Physics. 66:5066-5071
Electrical time domain measurements and transmission response measurements were made using a 31‐cm‐long, YBaCuO superconducting thin‐film microstrip line and a YBaCuO ground plane, each on separate 1‐cm LaGaO3 substrates, with a 125‐μm sap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52b00f46f6080073f9fe3b733bbb3cca
https://doi.org/10.1063/1.343782
https://doi.org/10.1063/1.343782
Publikováno v:
Journal of Applied Physics. 59:2619-2628
From picosecond pump‐probe and forward degenerate four‐wave mixing (DFWM) experiments, we obtain the near‐band‐gap nonlinear absorption and refraction properties of GaInAsP for λ∼1.5 μm. Using a mode‐locked color center laser, the nonli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33fbe0dc8c00ce4b158229d3f1245a50
https://doi.org/10.1063/1.336989
https://doi.org/10.1063/1.336989
Publikováno v:
Physical Review Letters. 38:1204-1207
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8f496079f6155bf48e5b65246678e5f
https://doi.org/10.1103/physrevlett.38.1204
https://doi.org/10.1103/physrevlett.38.1204
Publikováno v:
Applied Physics Letters. 18:112-115
Laser action has been achieved in 13 gases at high pressures using pulsed transverse excitation. A total of 149 wavelengths from 0.8 to 28μ was observed. Pulse lengths were found to lie in the range 0.2–5μsec. Several gases operate at atmospheric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e013cfb16f49bc79793c6ca785af3ff5
https://doi.org/10.1063/1.1653586
https://doi.org/10.1063/1.1653586
Publikováno v:
Applied Physics Letters. 18:261-264
Laser action has been achieved in 13 gases at high pressures using pulsed transverse excitation. A total of 149 wavelengths from 0.8 to 28μ was observed. Pulse lengths were found to lie in the range 0.2–5μsec. Several gases operate at atmospheric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3494f23aa0a26be7578d7be3991c975d
https://doi.org/10.1063/1.1653656
https://doi.org/10.1063/1.1653656
Publikováno v:
Applied Physics Letters. 53:1230-1232
The rapid degradation rate generally observed in InP/InGaAsP mushroom stripe lasers can be considerably decreased by regrowing the open sidewalls of the active stripe with low‐doped InP in a second epitaxial step using the hydride vapor phase trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bdc95168707c794038bdd962a0fba8e
https://doi.org/10.1063/1.100022
https://doi.org/10.1063/1.100022
Publikováno v:
Journal of Applied Physics. 60:665-667
We have measured sheet resistance and mobility changes for a series of In0.53Ga0.47As layers as a result of hydrogen, boron, and beryllium implantation. We find that boron and beryllium implantation can produce a two order‐of‐magnitude increase i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73e79f6fd89c17df35e5ee3ed0080733
https://doi.org/10.1063/1.337410
https://doi.org/10.1063/1.337410
Autor:
E. G. Burkhardt, Y. Twu, Niloy K. Dutta, T.M. Shen, John E. Bowers, S. G. Napholtz, Daniel Paul Wilt, Won-Tien Tsang, R. A. Logan, J. A. Ditzenberger
Publikováno v:
Journal of Applied Physics. 63:1218-1220
GaInAsP/InP double heterostructures grown by chemical‐beam epitaxy have been used in conjunction with liquid‐phase‐epitaxial regrowth to fabricate high‐performance buried heterostructure lasers operating at a wavelength of 1.5 μm. These lase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e99ba1ebca8bfba7371e3ef3d2f8316
https://doi.org/10.1063/1.339984
https://doi.org/10.1063/1.339984