Zobrazeno 1 - 2
of 2
pro vyhledávání: '"E. G. Arnault"'
Autor:
J. Tang, M. T. Wei, A. Sharma, E. G. Arnault, A. Seredinski, Y. Mehta, K. Watanabe, T. Taniguchi, F. Amet, I. Borzenets
Publikováno v:
Physical Review Research, Vol 4, Iss 2, p 023203 (2022)
We investigate the zero-bias behavior of Josephson junctions made of encapsulated graphene boron nitride heterostructures in the long ballistic junction regime. For temperatures down to 2.7 K, the junctions appear nonhysteretic with respect to the sw
Externí odkaz:
https://doaj.org/article/fb0edc92ddb6405689f56e58a4ef326d
Autor:
A. Seredinski, E. G. Arnault, V. Z. Costa, L. Zhao, T. F. Q. Larson, K. Watanabe, T. Taniguchi, F. Amet, A. K. M. Newaz, G. Finkelstein
Publikováno v:
AIP Advances, Vol 11, Iss 4, Pp 045312-045312-5 (2021)
Establishing ohmic contact to van der Waals semiconductors such as MoS2 is crucial to unlocking their full potential in next-generation electronic devices. Encapsulation of few layer MoS2 with hBN preserves the material’s electronic properties but
Externí odkaz:
https://doaj.org/article/667651ba44da45fbadab9090455d1d50