Zobrazeno 1 - 10
of 12
pro vyhledávání: '"E. Frisa"'
Autor:
F. Bordonaro, S. Mazza, E. Frisa, A. Granata, F. Di Vincenzo, P. Sperandeo, A. Polissi, A. Corsini, L. Arnaboldi
Publikováno v:
Atherosclerosis. 355:174
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e3bbfcc2cba4b52746dd659bc6514fc
https://doi.org/10.1016/j.atherosclerosis.2022.06.729
https://doi.org/10.1016/j.atherosclerosis.2022.06.729
Autor:
Larry E. Frisa, Leo Asinovsky
Publikováno v:
Thin Solid Films. :303-307
The thickness and uniformity of TiNx layers, which are widely used as diffusion barriers, is routinely determined using sheet resistance measurements. However, resistivity is sensitive to stoichiometry as well as to film thickness. In this paper it i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::468104cf2d6ffa93d9f1ae9f5d1d14ce
https://doi.org/10.1016/s0040-6090(97)00837-7
https://doi.org/10.1016/s0040-6090(97)00837-7
Autor:
Leo Asinovsky, Larry E. Frisa
Publikováno v:
Microelectronic Engineering. :427-432
TiN is widely used as a diffusion barrier layer. Uniformity of the thickness and composition of this layer is dependent on the deposition conditions and is important for production yield. This uniformity is routinely derived from the sheet resistance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43468da8b9663bbf00f80e4bb5470f45
https://doi.org/10.1016/s0167-9317(97)00142-1
https://doi.org/10.1016/s0167-9317(97)00142-1
Autor:
Jeroen Huijbregtse, Joseph S. Gordon, Christian Chovino, Brid Connolly, Marianna Silova, Colleen Weins, Larry E. Frisa, Nicolae Maxim
Publikováno v:
25th European Mask and Lithography Conference.
Advanced photolithography tools use 193 nanometer wavelength light for conventional and immersion printing. The increased energy of 193 nm (ArF) light coupled with the higher absorption cross section of most materials has lead to a dramatic increase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb98bd05ad5a4a54dea71869285c1787
https://doi.org/10.1117/12.835174
https://doi.org/10.1117/12.835174
Publikováno v:
SPIE Proceedings.
While significant progress has been made in reducing the occurrence rate of progressive defect growth on photomasks used at 193nm, the issue continues to be a problem for many semiconductor fabs. Increasing evidence from multiple sources indicates th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7396daa000472069f2222479f13440b3
https://doi.org/10.1117/12.747145
https://doi.org/10.1117/12.747145
Autor:
Steve Mahoney, David Chan, John Keagy, Colleen Weins, Makoto Kozuma, Larry E. Frisa, Joseph Gordon, Christian Chovino, Frank F. Chen, Takahiro Matsuura, Kyoko Kuroki
Publikováno v:
SPIE Proceedings.
With the use of 193nm lithography, haze growth has increasingly become a critical issue for photomask suppliers and wafer fabs. Recent photomask industry surveys indicate the occurrence rate of haze is 10 times higher on 193nm masks compared to 248nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::634552c6ea98aa48a3f6a439f0ad1ded
https://doi.org/10.1117/12.728920
https://doi.org/10.1117/12.728920
Autor:
Erik Nelson, Matt J. Lamantia, Brooke Murray, Larry E. Frisa, Colleen Weins, Joseph Gordon, Michael Green
Publikováno v:
SPIE Proceedings.
With the use of 193nm lithography, haze growth has increased and become a critical issue for photomask suppliers and wafer fabs. Currently, the industry uses various test methods to measure known contributions to crystal growth, such as ion chromatog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::956a4bbd3002e95e768f4cb0afa4bc83
https://doi.org/10.1117/12.632204
https://doi.org/10.1117/12.632204
Autor:
Rajan Nagabushnam, Scott C. Bolton, Paul G. Y. Tsui, Ted R. White, H. Chuang, Dave Kolar, Larry Pulvirent, Larry E. Frisa, Mohamed Jahanbani, Jeff Cope
Publikováno v:
SPIE Proceedings.
This work compares the extendibility of titanium with pre- deposition amorphizing implant (PAI) and cobalt salicides to sub-0.25 micrometer technologies. Cobalt salicide has low sheet resistance and a tighter distribution of sheet resistances than ti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abc1466cd70d332ab1072cea52065f53
https://doi.org/10.1117/12.323957
https://doi.org/10.1117/12.323957
Autor:
Elizabeth Weitzman, John Mendonca, S. Anderson, M. Angyal, Jeffrey L. Klein, Gregory Norman Hamilton, B. R. Rogers, R. Islam, Vidya Kaushik, Suresh Venkatesan, C. Capasso, Cindy Reidsema Simpson, Rich Gregory, Hisao Kawasaki, Ramnath Venkatraman, Stanley M. Filipiak, M. Herrick, D.G Coronell, E. Apen, Larry E. Frisa, Janos Farkas, R. Fiordalice, Dean J. Denning, Ajay Jain, P. Crabtree, T. P. Ong, B. Smith, T. Sparks
Publikováno v:
MRS Proceedings. 514
We report the integration of six levels of Cu interconnects using dual inlaid patterning in a 0.2 μm logic technology. A review of process technology as well as device performance shortcomings using conventional aluminum metallization has been prese
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dc9ad3030df8a3b143769e2a0afe0ee
https://doi.org/10.1557/proc-514-41
https://doi.org/10.1557/proc-514-41
Publikováno v:
AIAA Journal. 22:1544-1549
It has been customary to assume that ions flow nearly equally in all directions from the ion production region within an electron-bombardment discharge chamber. Ion flow measurements in a multipole discharge chamber have shown that this assumption is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb4521a246239ec82608c5bd8c5089f9
https://doi.org/10.2514/3.8816
https://doi.org/10.2514/3.8816