Zobrazeno 1 - 10
of 71
pro vyhledávání: '"E. F. Schubert"'
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 10:265-268
Autor:
E. F. Schubert, Priyalal S. Wijewarnasuriya, Roger E. Welser, Jay Lewis, Harry Efsthadiatis, Yash R. Puri, Ashok K. Sood, Nibir K. Dhar, Gopal G. Pethuraja, Pradeep Haldar
Publikováno v:
SPIE Proceedings.
Electro-optical/infrared nanosensors are being developed for a variety of defense and commercial systems applications. One of the critical technologies that will enhance EO/IR sensor performance is the development of advanced antireflection coatings
Autor:
Seung Cheol, Han, Jae-Kwan, Kim, Jun Young, Kim, Dong Min, Lee, Jae-Sik, Yoon, Jong-Kyu, Kim, E F, Schubert, Ji-Myon, Lee
Publikováno v:
Journal of nanoscience and nanotechnology. 13(8)
The electrical properties of Ni-based ohmic contacts to N-face p-type GaN were investigated. The specific contact resistance of N-face p-GaN exhibits a linear decrease from 1.01 omega cm2 to 9.05 x 10(-3) omega cm2 for the as-deposited and the anneal
Autor:
Ashok K. Sood, Gopal Pethuraja, Adam W. Sood, Roger E. Welser, Yash R. Puri, Jaehee Cho, E. F. Schubert, Nibir K. Dhar, Priyalal Wijewarnasuriya, Martin B. Soprano
Publikováno v:
SPIE Proceedings.
Autor:
E. F. Schubert
Publikováno v:
Doping in III-V Semiconductors. :541-544
Autor:
E. F. Schubert, H.-J. Gossmann
Publikováno v:
Critical Reviews in Solid State and Materials Sciences. 18:1-67
Two-dimensional doping sheets (“δ-doping”) are integral parts of many novel semiconductor device concepts. Their practical realization in silicon (Si), however, was long delayed by the difficulty to introduce dopants into Si in a well-controlled
Autor:
E. F. Schubert, Dean A. Stocker
Publikováno v:
Journal of The Electrochemical Society. 146:2702-2704
The roughness of GaN surfaces produced by photoenhanced etching is significantly reduced by the introduction of an external bias voltage during the etching process. The root‐mean‐square surface roughness decreases from a maximum of approximately
Autor:
E F Schubert, Jong K Kim
The light-emitting triode (LET) is a three-terminal p-n junction device that accelerates carriers in the lateral direction, i.e. parallel to the p-n junction plane, by means of an electric field between two anodes. The lateral field provides addition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6dd2de4ad2f71e9d4329ee03b0f18e3
https://doi.org/10.21236/ada471030
https://doi.org/10.21236/ada471030
In 1880, by studying light passing through Earth's atmosphere, Lord Rayleigh mathematically demonstrated that graded-refractive-index layers have broadband antireflection characteristics1. Graded-index coatings with different index profiles have been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::592d33653e2afc309daabea430d0bb6b
Publikováno v:
Light-Emitting Diodes: Research, Manufacturing, and Applications XI.
A GaInN light-emitting diode (LED) that employs a new type of reflector consisting of an array of SiO 2 pyramids and a reflective Ag layer is demonstrated to have enhanced light extraction compared to GaInN LEDs with a planar Ag reflector. Ray tracin