Zobrazeno 1 - 10
of 26
pro vyhledávání: '"E. F. Koch"'
Autor:
E. F. Koch, John L. Walter
Publikováno v:
Journal of Materials Science. 26:505-509
Tungsten wire, commercially doped with aluminium, silicon, and potassium, was obtained from six different manufacturers with a diameter of 0.0063 cm. The tensile strength at 1620 °C, a measurement of the quality of the wire used by the General Elect
Autor:
E. F. Koch, R. N. Singh
Publikováno v:
Journal of The Electrochemical Society. 133:1191-1195
Publikováno v:
Metallurgical Transactions A. 8:1141-1148
The microstructure and growth characteristics in the annealed amorphous alloy Ni40Fe40P14B6 were studied by transmission electron microscopy and X-ray diffraction. Samples were annealed for 2 h at 370°C to initiate crystallization. In the early stag
Publikováno v:
Journal of Applied Physics. 46:2244-2249
Very high critical current densities (Jc=8×105 A/cm2 at 4.2 K and 6 T) have been achieved in commercial Nb3Sn tape and more recently in multifilamentary Nb3Sn superconductors. The relative contributions of two types of pinning centers, grain boundar
Publikováno v:
Metallurgical Transactions A. 13:1501-1510
As-drawn tungsten wire has been known to split and rolled tungsten sheet to delaminate if mishandled. The mechanism of splitting of tungsten wire in a knife-edge compression test was studied for a number of tungsten wires of different diameter, compo
Publikováno v:
Journal of Applied Physics. 46:1827-1830
A detailed examination by transmission electron microscopy and selected−area diffraction revealed that the thin−film intergranular phase in a highly non−Ohmic multicomponent metal oxide varistor system based on ZnO with small additions of antim
Publikováno v:
Journal of Applied Physics. 58:3388-3393
The phase and microstructure of Ni, Co, and Fe impurities found in synthetic diamonds have been characterized in some detail using a combination of extended x‐ray absorption fine structure (EXAFS) utilizing intense synchrotron radiation as a light
Publikováno v:
Journal of Applied Physics. 57:1200-1213
Shallow boron‐doped junctions in silicon have been investigated by means of secondary ion mass spectrometry, scanning electron microscopy, transmission electron microscopy, spreading resistance profiling, and four‐point probe techniques. The junc
Publikováno v:
Industrial & Engineering Chemistry. 33:516-524
Publikováno v:
Analytical Chemistry. 20:434-444