Zobrazeno 1 - 3
of 3
pro vyhledávání: '"E. E. Tatarinov"'
Autor:
I. K. Meshkovskii, S. V. Vikhman, A. A. Reutskii, M. A. Eron’yan, Peter S. Parfenov, P. A. Lesnikov, E. E. Tatarinov
Publikováno v:
Glass Physics and Chemistry. 45:589-591
The surface relief of blanks and silica glass fibers is studied by atomic force microscopy. The temperature change during free cooling is recorded using an infrared pyrometer. The results of the measurements of the roughness of the blank and fiber co
Autor:
S. N. Rodin, W. V. Lundin, E. E. Tatarinov, M. I. Mitrofanov, M. N. Mizerov, I. V. Levitskii, V. P. Evtikhiev, G. V. Voznyuk
Publikováno v:
Semiconductors. 52:2114-2116
Our study describes FIB technological aspects of preparing mask for GaN selective area epitaxy on Si3N4/GaN template.
Autor:
M. A. Kaliteevski, I. V. Levitskii, E. E. Tatarinov, S. N. Rodin, G. V. Voznyuk, V. P. Evtikhiev, M. I. Mitrofanov
Publikováno v:
Semiconductors. 52:954-956
In the Si3N4 layer, coaxial and single submicrometer GaN structures of hexagonal shape with pyramidal facets are formed by selective vapor-phase epitaxy in windows produced with a focused ion beam. It is found that coaxial hexagonal structures are fo