Zobrazeno 1 - 10
of 14
pro vyhledávání: '"E. E. Simonyi"'
Autor:
E. E. Simonyi, E. G. Liniger
Publikováno v:
Journal of Applied Physics. 96:3482-3485
Moisture-driven crack growth was measured as a function of film thickness for a variety of low dielectric constant and ultralow dielectric constant films and a comparison of the crack driving force was made. By plotting the crack velocity versus the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::206c0faa3ac26f719c7a400130433cf1
https://doi.org/10.1063/1.1774269
https://doi.org/10.1063/1.1774269
Publikováno v:
IBM Journal of Research and Development. 35:512-534
Issues related to the practical usage in the pressroom of both the direct negative and direct plate are discussed. Two concerns associated with the usage of the direct negative during platemaking are treated: 1) the effect of light transmission throu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd08a78f83df117f4ccf2acdc36ff30f
https://doi.org/10.1147/rd.354.0512
https://doi.org/10.1147/rd.354.0512
Publikováno v:
IBM Journal of Research and Development. 22:315-320
An important step in the characterization of organic conductors is the ability to correlate the solid state electrical properties of these materials with their composition and crystal structure. In many cases it has not been possible to grow single c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59e34c6b99df4dc494f67e8db9cc3aeb
https://doi.org/10.1147/rd.223.0315
https://doi.org/10.1147/rd.223.0315
Publikováno v:
Le Journal de Physique Colloques. 42:C4-635
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88af1993ff15f2b610babb226f54a860
https://doi.org/10.1051/jphyscol:19814139
https://doi.org/10.1051/jphyscol:19814139
Publikováno v:
Applied Physics Letters. 39:73-75
A new method of amorphous hydrogenated silicon (a‐Si:H) chemical vapor deposition is presented in which SiH4 is homogeneously decomposed at high temperature and pressure to produce films on low‐temperature substrates having up to 30‐at. % H and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a19b5175db767bb6dab279df39e54f3b
https://doi.org/10.1063/1.92521
https://doi.org/10.1063/1.92521
Publikováno v:
Applied Physics Letters. 40:973-975
Compositional, structural and transport data are presented for amorphous hydrogenated silicon (a‐Si:H) prepared by homogeneous chemical vapor deposition (HOMOCVD). We find a remarkable similarity in properties between HOMOCVD and plasma a‐Si:H, i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::470a247fba9c330adbe5189f1955f554
https://doi.org/10.1063/1.92972
https://doi.org/10.1063/1.92972
Publikováno v:
Applied Physics Letters. 37:725-727
Amorphous hydrogenated silicon has been deposited by plasma decomposition of Si2H6 and Si3H8. A major feature of the process is a deposition rate enhancement of over a factor of 20 compared to monosilane. The resulting films are compositionally simil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::808aec3dca2b24b89851e25fc5cbd0a2
https://doi.org/10.1063/1.92059
https://doi.org/10.1063/1.92059
Publikováno v:
AIP Conference Proceedings.
Compared to SiH4, the plasma deposition of amorphous hydrogenated silicon from Si2H6 results in compositionally similar films, deposited at rates at least an order of magnitude higher. The films also display larger dark and photoconductivties, a resu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ddc4474b8eebc8b0accdaa81a877987
https://doi.org/10.1063/1.33027
https://doi.org/10.1063/1.33027
Publikováno v:
Orvosi hetilap [Orv Hetil] 1980 Oct 26; Vol. 121 (43), pp. 2629-31.