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pro vyhledávání: '"E. Dupont-Ferrier"'
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Autor:
Romain Albert, Jean-Luc Thomassin, E. Dupont-Ferrier, F. Blanchet, Max Hofheinz, Fabien Portier, Dibyendu Hazra, Frédéric Gustavo, Alexander Grimm, Salha Jebari, Juha Leppäkangas
Publikováno v:
Physical Review X
Physical Review X, American Physical Society, 2019, 9 (2), ⟨10.1103/PhysRevX.9.021016⟩
Physical Review X, 2019, 9 (2), ⟨10.1103/PhysRevX.9.021016⟩
Physical review / X, 9 (2), 021016
Physical Review X, American Physical Society, 2019, 9 (2), ⟨10.1103/PhysRevX.9.021016⟩
Physical Review X, 2019, 9 (2), ⟨10.1103/PhysRevX.9.021016⟩
Physical review / X, 9 (2), 021016
International audience; Single-photon generation is an important proof of the underlying quantum nature of a physical process and a ubiquitous tool for scientific exploration, with applications ranging from spectroscopy and metrology to quantum compu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf109f08815cc8ffbce2705ac070ccd5
https://hal.archives-ouvertes.fr/hal-02164175
https://hal.archives-ouvertes.fr/hal-02164175
Autor:
Xavier Jehl, R. Wacquez, B. Roche, B. Sklenard, Marc Sanquer, Maud Vinet, Benoit Voisin, O. Cueto, S. De Franceschi, M. Cobian, E. Dupont-Ferrier, Yann-Michel Niquet
Publikováno v:
Journal of Physics: Condensed Matter
Journal of Physics: Condensed Matter, IOP Publishing, 2015, 27 (15), pp.154206. ⟨10.1088/0953-8984/27/15/154206⟩
Journal of Physics: Condensed Matter, 2015, 27 (15), pp.154206. ⟨10.1088/0953-8984/27/15/154206⟩
Journal of Physics: Condensed Matter, IOP Publishing, 2015, 27 (15), pp.154206. ⟨10.1088/0953-8984/27/15/154206⟩
Journal of Physics: Condensed Matter, 2015, 27 (15), pp.154206. ⟨10.1088/0953-8984/27/15/154206⟩
International audience; We describe the first implementation of a coupled atom transistor where two shallow donors (P or As) are implanted in a nanoscale silicon nanowire and their electronic levels are controlled with three gate voltages. Transport
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0f3dff3fa379223360acab1b43f30a6
https://hal.archives-ouvertes.fr/hal-01611290
https://hal.archives-ouvertes.fr/hal-01611290
Publikováno v:
Europhysics Letters (EPL). 72:430-436
We present an experimental study of the local electronic properties of atomic-size impurities in an ErSi2 layer grown on the Si(111) surface, which behaves as a quasi–two-dimensional (2D) metal. From scanning tunneling spectroscopy measurements at
Autor:
I. Yeo, P-L. de Assis, A. Gloppe, E. Dupont-Ferrier, P. Verlot, N. S. Malik, E. Dupuy, J. Claudon, J-M. Gxe9rard, A. Auffxe8ves, G. Nogues, S. Seidelin, J-Ph. Poizat, O. Arcizet & M. Richard
Publikováno v:
Nature Nanotechnology.
Autor:
E. Dupont-Ferrier, Romain Wacquez, B. Roche, Yann-Michel Niquet, O. Cueto, M. Vinet, M. Sanquer, B. Sklenard, Benoit Voisin, M. Cobian, Xavier Jehl, S. De Franceschi
Publikováno v:
ESSDERC
Following the recent development of Single Atom Transistors [1,2], we realized the first Coupled Atom Transistor in a small silicon nanowire MOSFET. Three independent gates control two donors connected in series between the source and the drain in a
Publikováno v:
Physical Review Letters.
Autor:
Xavier Jehl, B. Roche, E. Dupont-Ferrier, Benoit Voisin, S. De Franceschi, Marc Sanquer, Romain Wacquez, M. Vinet
Publikováno v:
Physical Review Letters
Physical Review Letters, American Physical Society, 2013, 110 (13)
HAL
Physical Review Letters, 2013, 110 (13)
Physical Review Letters, American Physical Society, 2013, 110 (13)
HAL
Physical Review Letters, 2013, 110 (13)
We report on microwave-driven coherent electron transfer between two coupled donors embedded in a silicon nanowire. By increasing the microwave frequency we observe a transition from incoherent to coherent driving revealed by the emergence of a Landa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8ee75093fcfc111ee553b0984442501
https://hal.univ-grenoble-alpes.fr/hal-02009831
https://hal.univ-grenoble-alpes.fr/hal-02009831
Autor:
M. Vinet, Xavier Jehl, S. De Franceschi, E. Dupont-Ferrier, M. Sanquer, M. Pierre, B. Roche, Benoit Voisin, Romain Wacquez
Publikováno v:
2012 International Semiconductor Conference Dresden-Grenoble (ISCDG).
We access properties of single dopants embedded in ultra-scaled MOSFET. In such nanostructures, the ionization energy of a single dopant is enhanced. We establish a new method to determine the energy spectrum of a single dopant by connecting two dopa
Autor:
B. Roche, M. Vinet, Yann-Michel Niquet, Marc Sanquer, Romain Wacquez, Benoit Voisin, M. Cobian, E. Dupont-Ferrier, Xavier Jehl
We measure a large valley-orbit splitting for shallow isolated phosphorus donors in a silicon gated nanowire. This splitting is close to the bulk value and well above previous reports in silicon nanostructures. It was determined using a double dopant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::147b5585278af4870a632e073788bdb7