Zobrazeno 1 - 10
of 26
pro vyhledávání: '"E. Dacquay"'
Autor:
Dylan F. Williams, Wei Tai, P. Watson, Harish Krishnaswamy, Sorin P. Voinigescu, Jahnavi Sharma, E. Dacquay, David S. Ricketts, Zacharias George, Phillip L. Corson
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 62:658-668
This paper compares on-wafer thru-reflect-line (TRL) and off-wafer short-open-load-thru (SOLT) and line-reflect-reflect-match (LRRM) vector-network-analyzer probe-tip calibrations for amplifier characterization and parasitic-extraction calibrations f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34df1a3d3b4281a888e9c59be88aa489
https://doi.org/10.1109/tmtt.2014.2300839
https://doi.org/10.1109/tmtt.2014.2300839
Autor:
Bernard Sautreuil, Juergen Hasch, E. Dacquay, Pascal Chevalier, Alain Chantre, A. Tomkins, Sorin P. Voinigescu
Publikováno v:
IEEE Journal of Solid-State Circuits. 48:2011-2021
The paper presents design optimization strategies and a comparison of the performance of SiGe HBT fundamental and push-push Colpitts and Colpitts-Clapp voltage-controlled oscillators (VCOs), with and without doublers and buffers, as possible solution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::194eb0dce7b1e5e8d46f497e4ef039cc
https://doi.org/10.1109/jssc.2013.2265494
https://doi.org/10.1109/jssc.2013.2265494
Autor:
David S. Ricketts, Dylan F. Williams, Wei Tai, E. Dacquay, Harish Krishnaswamy, Sorin P. Voinigescu, Jahnavi Sharma, P. Watson, Phillip L. Corson, Z. George
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 61:2685-2694
We study and present design guidelines for thru-reflect-line vector-network-analyzer calibration kits used for characterizing circuits and transistors fabricated on silicon integrated circuits at millimeter-wave frequencies. We compare contact-pad de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61e83482a826a7f4f82b7ea03b8226e8
https://doi.org/10.1109/tmtt.2013.2265685
https://doi.org/10.1109/tmtt.2013.2265685
Autor:
Andreea Balteanu, E. Dacquay, Gabriel M. Rebeiz, Peter M. Asbeck, I. Sarkas, Sorin P. Voinigescu, A. Tomkins
Publikováno v:
IEEE Journal of Solid-State Circuits. 48:1126-1137
A high-efficiency, large output-power, mm-wave digital transmitter architecture is proposed for high data rate m-ary QAM transmission. Because it operates entirely in digital mode, without any matching networks, it is scalable in frequency up to at l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ea04953b604add2834a91388f12c275
https://doi.org/10.1109/jssc.2013.2252752
https://doi.org/10.1109/jssc.2013.2252752
Autor:
Pascal Chevalier, Valerio Adinolfi, Andreea Balteanu, A. Tomkins, E. Dacquay, Didier Celi, Sorin P. Voinigescu, I. Sarkas
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 60:4024-4034
This paper describes a methodology for extracting and verifying the high-frequency model parameters of the HICUM L0 and L2 models of a silicon-germanium HBT from device and circuit measurements in the 110-325-GHz range. For the first time, the non-qu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac6e410e05f1b5b0c10060d616688a95
https://doi.org/10.1109/tmtt.2012.2224368
https://doi.org/10.1109/tmtt.2012.2224368
Autor:
Alain Chantre, E. Dacquay, Sorin P. Voinigescu, Pascal Chevalier, A. Tomkins, E. Laskin, K.H.K. Yau, B. Sautreuil
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 60:813-826
A D-band SiGe HBT total power radiometer is reported with a peak responsivity of 28 MV/W, a noise equivalent power (NEP) of 14-18 fW/Hz1/2, and a temperature resolution better than 0.35 K for an integration time of 3.125 ms. The 1/f noise corner of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::151240ed872d828634577e3c52e02bef
https://doi.org/10.1109/tmtt.2012.2184132
https://doi.org/10.1109/tmtt.2012.2184132
Publikováno v:
IEEE Microwave Magazine. 13:30-54
Due to the aggressive scaling of metal-oxide-semiconductor field-effect transistors (MOSFETs) and silicon germanium SiGe heterojunction bipolar transistors (HBTs), silicon-based circuits operating above 100 GHz are becoming a reality. However, at pre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae0c7bca05fca13c25726e7011f16188
https://doi.org/10.1109/mmm.2011.2173869
https://doi.org/10.1109/mmm.2011.2173869
Autor:
Pascal Chevalier, J. Rosa, Christophe Gaquiere, G. Avenier, E. Canderle, F. Pourchon, N. Derrier, Andreea Balteanu, Didier Celi, A. Pottrain, Y. Carminati, A. Montagne, Daniel Gloria, Sorin P. Voinigescu, Alain Chantre, E. Dacquay, I. Sarkas, Thomas Lacave
Publikováno v:
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
This paper summarizes the technological developments carried out in STMicroelectronics to raise the fT / fMAX of SiGe HBTs up to ~ 300 GHz / 400 GHz. The noise and power performance in the W-band of different SiGe HBT generations are compared along w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36511f95107b8b975820f5af641c457b
https://doi.org/10.1109/csics.2012.6340083
https://doi.org/10.1109/csics.2012.6340083
Autor:
Sorin P. Voinigescu, B. Sautreuil, A. Tomkins, Pascal Chevalier, Jurgen Hasch, Alain Chantre, E. Dacquay
Publikováno v:
2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
This paper investigates fundamental and push-push SiGe HBT voltage-controlled-oscillator topologies with and without doublers, as possible solutions for efficient milliwatt-level, low-noise signal sources at sub-millimeter wave frequencies. A fundame
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e57cda3164d38a1eaa139e5bfc0cf9d8
https://doi.org/10.1109/bctm.2012.6352642
https://doi.org/10.1109/bctm.2012.6352642
Publikováno v:
2012 IEEE Radio Frequency Integrated Circuits Symposium.
A novel high efficiency, large output-power, 2-bit tuned mm-wave DAC realized in 45-nm SOI CMOS is demonstrated. A record breaking 24.3 dBm output power is achieved at 45 GHz with 18.3 dB saturated gain, >14.5 V pp differential output swing, a drain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec2cba53520f08e3b9d3dfe67cfe1734
https://doi.org/10.1109/rfic.2012.6242290
https://doi.org/10.1109/rfic.2012.6242290