Zobrazeno 1 - 5
of 5
pro vyhledávání: '"E. D. Wolley"'
Publikováno v:
Journal of Applied Physics. 37:1588-1593
The epitaxial growth of silicon on the basal plane of hexagonal silicon carbide substrates has been studied using the pyrolysis of silane in a flow system. The effects of deposition variables on the properties of grown films were evaluated using chem
Autor:
E. D. Wolley, R. A. Kokosa
Publikováno v:
1974 International Electron Devices Meeting (IEDM).
Amplifying Gate Thyristors are thyristors with an auxiliary thyristor integrated between the gate and main thyristor in order to enhance uniformity of turn-on and, hence, di/dt capability. In order to obtain the full benefits of enhanced di/dt capabi
Publikováno v:
Power Processing and Electronics Specialists Conference, 1972 IEEE.
This paper describes the design and development of 1500 volt, 1000 amp rms, 4 kHz triode thyristors and companion rectifiers for high frequency power conditioning. In order to obtain devices with the objective specifications, programs were conducted
Publikováno v:
Journal of The Electrochemical Society. 115:409
Phosphorus diffusion into epitaxial silicon layers studied by electrical and structural characteristics of epitaxial diffused planar junctions
Autor:
R. Stickler, E. D. Wolley
Publikováno v:
Journal of The Electrochemical Society. 114:1287