Výsledky vyhledávání - "E. D. Readinger"

Characterization of nanometer scale compositionally inhomogeneous AlGaN active regions on bulk AlN substrates

Autor: Ryan Enck, E. D. Readinger, Leo J. Schowalter, Michael Wraback, J. R. Grandusky, Hongen Shen, Gregory A. Garrett, Anand V. Sampath

Publikováno v: Solid-State Electronics. 54:1130-1134

The optical and structural properties of AlGaN active regions containing nanoscale compositional inhomogeneities (NCI) grown on low dislocation density bulk AlN substrates are reported. These substrates are found to improve the internal quantum effic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::717185324ccacb0bc910024b48d4d2a0
https://doi.org/10.1016/j.sse.2010.05.006

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THE EFFECTS OF INCREASING AlN MOLE FRACTION ON THE PERFORMANCE OF AlGaN ACTIVE REGIONS CONTAINING NANOMETER SCALE COMPOSITIONALLY INHOMOGENEITIES

Autor: Noble M. Johnson, Christopher L. Chua, Michael Wraback, Meredith Reed, Hongen Shen, Gregory A. Garrett, E. D. Readinger, Anand V. Sampath, Wendy L. Sarney, Craig Moe

Publikováno v: International Journal of High Speed Electronics and Systems. 19:69-76

In this paper we report on the characterization of n - Al 0.51 Ga 0.49 N active regions and the fabrication of ultraviolet LEDs that contain self-assembled, nanometer-scale compositional inhomogeneities ( NCI - AlGaN ) with emission at ~290 nm. These

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::21076fcf1c100b34cb788640875e8472
https://doi.org/10.1142/s0129156409006096

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Benefits of negative polarization charge in n ‐InGaN on p ‐GaN single heterostructure light emitting diode with p ‐side down

Autor: Meredith Reed, Alexander Syrkin, Vladimir A. Dmitriev, Alexander Usikov, E. D. Readinger, Hongen Shen, Oleg Kovalenkov, Michael Wraback, Craig Moe

Publikováno v: physica status solidi c. 6:585-588

The effects of negative polarization charge at the n -InGaN/p -GaN interface on the performance of hydride vapour phase epitaxy-deposited single heterostructure n -In0.17Ga0.83N/p -GaN light emitting diodes with p -side down are investigated. The neg

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e576e626eac694548a13f2c19418ec81
https://doi.org/10.1002/pssc.200880401

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INDIUM NITRIDE: A NEW MATERIAL FOR HIGH EFFICIENCY, COMPACT, 1550nm LASER-BASED TERAHERTZ SOURCES IN CHEMICAL AND BIOLOGICAL DETECTION

Autor: James S. Speck, Gregor Koblmüller, Grace D. Chern, E. D. Readinger, Paul H. Shen, C. S. Gallinat, Michael Wraback

Publikováno v: International Journal of High Speed Electronics and Systems. 18:3-9

Indium nitride ( InN ) is identified as a promising terahertz (THz) emitter based on the optical and electronic properties of high quality In - and N -face samples. Time domain THz spectroscopy has been employed to measure the pump wavelength and bac

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::42a0bbb7b8974109414f2a195133e2f9
https://doi.org/10.1142/s0129156408005084

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Device Challenges for Making a p-Side Down HVPE-Grown n-InGaN/p-GaN Single Heterostructure LED

Autor: Michael Wraback, Meredith Reed, Alexander Syrkin, Vladimir A. Dmitriev, Paul H. Shen, E. D. Readinger, Alexander Usikov

Publikováno v: ECS Transactions. 11:171-174

In this paper, we demonstrate the electrical and optical properties of hydride vapor phase epitaxy (HVPE)-deposited single heterostructure (SH) n-InGaN/p-GaN LED structures. We also discuss the device challenges associated with fabrication, as well a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ce43c2ae104c74aa031f5dde3117460b
https://doi.org/10.1149/1.2783870

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Growth of InN by Plasma-Assisted Molecular Beam Epitaxy on InN/GaN and p-GaN Templates

Autor: Paul H. Shen, Meredith Reed, Vladimir Ivantsov, Michael Wraback, Grace D. Chern, Alexander Usikov, E. D. Readinger, Vladimir A. Dmitriev, Alexander Syrkin, Oleg Kovalenkov

Publikováno v: ECS Transactions. 11:103-109

InN is grown by plasma-assisted molecular beam epitaxy on templates prepared by hydride vapor phase epitaxy. These uniques templates consist of InN/GaN and p-GaN epilayers. Homoepitaxy creates challenges for surface preparation prior to growth. Quali

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::225deeeece0383f9afe2eb0b98a9888a
https://doi.org/10.1149/1.2783863

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Novel HVPE technology to grow nanometer thick GaN, AlN, AlGaN layers and multi‐layered structures

Autor: Anna Volkova, Vladimir Ivantsov, E. D. Readinger, Vladimir A. Dmitriev, Vitali Sukhoveev, Oleg Kovalenkov, Alexander Usikov, Lisa Shapovalova, Subhash Mahajan, Gregory A. Garrett, Michael Wraback, Michael A. Reshchikov, Ranjan Datta, Fanyu Meng

Publikováno v: physica status solidi c. 4:2301-2305

In this paper, we demonstrate new results on controllable HVPE growth of nitride materials with a deposition rate below 0.02 microns per minute and the first quantum size structures fabricated by HVPE. The nm-scale layer thicknesses were verified by

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b37799ea75287c3fbb68f65cdab9f818
https://doi.org/10.1002/pssc.200674842

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InN‐based layers grown by modified HVPE

Autor: Vladimir Ivantsov, V. Soukhoveev, Alexander Syrkin, Oleg Kovalenkov, Vladimir Kuryatkov, D. Y. Song, E. D. Readinger, Mark Holtz, V. Davydov, N. M. Shmidt, Alexander Usikov, Vladimir A. Dmitriev, C. J. Collins, Sergey A. Nikishin, D. Rosenbladt

Publikováno v: physica status solidi c. 3:1444-1447

This paper contains results on InN and InGaN growth by Hydride Vapor Phase Epitaxy (HVPE) on various substrates including sapphire and GaN/sapphire, AlGaN/sapphire, and AlN/sapphire templates. The growth processes are carried out at atmospheric press

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e85fd40279cd3b29242d6171e44866a5
https://doi.org/10.1002/pssc.200565454

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Defect density dependence of luminescence efficiency and lifetimes in AlGaN active regions exhibiting enhanced emission from nanoscale compositional inhomogeneities

Autor: Hongen Shen, E. D. Readinger, Vladimir A. Dmitriev, C. J. Collins, Anand V. Sampath, Alexander Usikov, Wendy L. Sarney, V. Soukhoveev, Gregory A. Garrett, Michael Wraback

Publikováno v: physica status solidi c. 3:2125-2128

AlGaN epilayers grown by plasma-assisted molecular beam epitaxy and exhibiting high internal quantum efficiency (up to 30%) are incorporated into double-heterostructure devices grown on base layers of varying defect density. Growth of these AlGaN act

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3065e553de06ef9b46566997e1df367c
https://doi.org/10.1002/pssc.200565448

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Growth of AlGaN alloys exhibiting enhanced luminescence efficiency

Autor: Gregory A. Garrett, Wendy L. Sarney, Peter G. Newman, Anand V. Sampath, Hongen Shen, C. J. Collins, Michael Wraback, E. D. Readinger

Publikováno v: Journal of Electronic Materials. 35:641-646

Interest in developing ultraviolet emitters using the III-Nitride family of semiconductors has sparked considerable effort in fabricating AlGaN alloys that exhibit enhanced luminescence based on strong carrier localization, similar to their InGaN bre

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ccbb2545da964dc96525010434307f20
https://doi.org/10.1007/s11664-006-0113-1

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