Zobrazeno 1 - 3
of 3
pro vyhledávání: '"E. D. Olshansky"'
Autor:
V. L. Stolyarov, B. A. Gurovich, M. M. Dementyeva, K. E. Prikhod’ko, E. M. Malieva, A. A. Cherepanov, E. D. Olshansky, A. G. Domantovsky, L. V. Kutuzov, B. V. Goncharov
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 1005:012023
Thin NbN films were synthesized by a method of magnetron sputtering of solid Nb targets by nitrogen ions at temperatures less than 100 °C on substrates of the sapphire. The dependences of electrical resistance of films on the temperature in range 4.
Autor:
L. V. Kutuzov, M. M. Dementyeva, K. E. Prikhod’ko, E. D. Olshansky, B. A. Gurovich, B. V. Goncharov
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 699:012014
Thin MoCN films were synthesized by a method of cathode sputtering of mosaic Mo-C targets by nitrogen ions at temperature of 800°C on substrates of the oxidized silicon. The temperature dependences of electrical resistance of the films in the range
Autor:
Evgenia Kuleshova, Y. Lunin, E. D. Olshansky, Konstantin I. Maslakov, K. E. Prikhod’ko, A. G. Domantovsky, B. A. Gurovich
Publikováno v:
SPIE Proceedings.
The structure and electric properties of initial oxides and metals (Bi, Ag, Cu, Ni, Co, Mo and W) produced by Selective Removal of oxygen Atoms technique (SRA) were studied. It was found a correspondence of electrical conductivity of SRA metals and p