Zobrazeno 1 - 10
of 75
pro vyhledávání: '"E. D. Nowak"'
Publikováno v:
Proceedings. IEEE International SOI Conference.
As it becomes more difficult to increase MOSFET current drive through standard scaling techniques, other methods to improve performance are being pursued. One such technique is to use silicon-on-insulator (SOI) starting wafers. Performance enhancemen
Autor:
E. D. Nowak, Chenming Hu
Publikováno v:
Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials.
Publikováno v:
Journal of Evolutionary Biology; Jul2023, Vol. 36 Issue 7, p1040-1049, 10p
Autor:
Dette, Holger1 (AUTHOR) holger.dette@rub.de, Eckle, Theresa1 (AUTHOR), Vetter, Mathias2 (AUTHOR)
Publikováno v:
Scandinavian Journal of Statistics. Dec2020, Vol. 47 Issue 4, p1243-1274. 32p.
Publikováno v:
Canadian Journal of Zoology. 2019, Vol. 97 Issue 4, p281-293. 13p. 1 Diagram, 4 Charts, 5 Graphs.
Publikováno v:
Journal of Applied Physics; 2018, Vol. 124 Issue 6, pN.PAG-N.PAG, 5p, 1 Diagram, 4 Graphs
Autor:
Xialin Liu1, Jianhong Shi1 purewater@sjtu.edu.cn, Xiaoyan Wu1, Guihua Zeng1 ghzeng@sjtu.edu.cn
Publikováno v:
Scientific Reports. 3/22/2018, p1-8. 8p.
Autor:
Bonaldo, Stefano, Gorchichko, Mariia, Zhang, En Xia, Ma, Teng, Mattiazzo, Serena, Bagatin, Marta, Paccagnella, Alessandro, Gerardin, Simone, Schrimpf, Ronald D., Reed, Robert A., Linten, Dimitri, Mitard, Jerome, Fleetwood, Daniel M.
Publikováno v:
IEEE Transactions on Nuclear Science; Jul2022, Vol. 69 Issue 7, p1444-1452, 9p
Publikováno v:
Applied Physics Letters; 6/13/2022, Vol. 120 Issue 24, p1-5, 5p
Autor:
Sheleg, Gil, Tessler, Nir
Publikováno v:
IEEE Transactions on Electron Devices; Feb2022, Vol. 69 Issue 2, p555-560, 6p