Zobrazeno 1 - 6
of 6
pro vyhledávání: '"E. D. Atanasova"'
Publikováno v:
Physica Status Solidi (a). 59:853-859
The morphology of single crystal silicon and SiO2 surfaces etched in CF4 or CF4 + 5% O2 plasma as well as properties of MOS structures obtained by thermal oxidation of plasma etched Si are studied. The etched surfaces are rough and the shape and the
Publikováno v:
Vacuum. 26:237-241
A dc magnetron system for cathode sputtering with a spool-shaped cathode is described. In comparison with the cylindrical cathode, the spool-shaped cathode increases the intensity of the discharge by one order of magnitude for gas pressures of 10 −
Publikováno v:
Physica Status Solidi (a). 64:73-80
The oxidation kinetics of Si in oxygen rf plasma in a planar reactor is investigated. It is found that the dependence of the oxide layer thickness on oxidation time is characterized by a rapid initial region described by the Mott-Cabrera law, followe
Publikováno v:
Thin Solid Films. 48:187-192
Oxygen ions with energies of 5–60 keV were implanted into Si at doses of 10 15 –10 18 ions cm −2 to form SiO 2 layers. Annealing was carried out in nitrogen at 500–1000 °C and in hydrogen at 450 °C. By monitoring the IR transmission spectra
Publikováno v:
Thin Solid Films. 41:L21-L23