Zobrazeno 1 - 10
of 17
pro vyhledávání: '"E. D. Atanasova"'
Publikováno v:
Physica Status Solidi (a). 59:853-859
The morphology of single crystal silicon and SiO2 surfaces etched in CF4 or CF4 + 5% O2 plasma as well as properties of MOS structures obtained by thermal oxidation of plasma etched Si are studied. The etched surfaces are rough and the shape and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39607d7ba2c65c5202695834225601f2
https://doi.org/10.1002/pssa.2210590253
https://doi.org/10.1002/pssa.2210590253
Publikováno v:
Vacuum. 26:237-241
A dc magnetron system for cathode sputtering with a spool-shaped cathode is described. In comparison with the cylindrical cathode, the spool-shaped cathode increases the intensity of the discharge by one order of magnitude for gas pressures of 10 −
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c43253d175dc0f67b28ddcccb6d7731
https://doi.org/10.1016/s0042-207x(76)80483-6
https://doi.org/10.1016/s0042-207x(76)80483-6
Publikováno v:
Physica Status Solidi (a). 64:73-80
The oxidation kinetics of Si in oxygen rf plasma in a planar reactor is investigated. It is found that the dependence of the oxide layer thickness on oxidation time is characterized by a rapid initial region described by the Mott-Cabrera law, followe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::734809d42982a8f8947b7783b67e490e
https://doi.org/10.1002/pssa.2210640106
https://doi.org/10.1002/pssa.2210640106
Publikováno v:
Thin Solid Films. 48:187-192
Oxygen ions with energies of 5–60 keV were implanted into Si at doses of 10 15 –10 18 ions cm −2 to form SiO 2 layers. Annealing was carried out in nitrogen at 500–1000 °C and in hydrogen at 450 °C. By monitoring the IR transmission spectra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::786d3931b5f700797b4d0f31a41ee9eb
https://doi.org/10.1016/0040-6090(78)90240-7
https://doi.org/10.1016/0040-6090(78)90240-7
Publikováno v:
Thin Solid Films. 41:L21-L23
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9800bf60fe1bd27a1a8774626b1e705c
https://doi.org/10.1016/0040-6090(77)90388-1
https://doi.org/10.1016/0040-6090(77)90388-1
Autor:
Sood, Ankita1 asood@ar.iitr.ac.in, Biswas, Arindam1
Publikováno v:
Geographica Pannonica. Dec2022, Vol. 26 Issue 4, p385-395. 11p.
Autor:
Belyaev, A.1, Boltovets, N.2, Konakova, R.1 konakova@isp.kiev.ua, Kudryk, Ya.1, Sachenko, A.1, Sheremet, V.1, Vinogradov, A.1
Publikováno v:
Semiconductors. Mar2012, Vol. 46 Issue 3, p330-333. 4p.
Publikováno v:
Physica Status Solidi (B); May2018, Vol. 255 Issue 5, p1-1, 9p
Autor:
Phahle, A. M.
Publikováno v:
Digest of Literature on Dielectrics, Volume 41, 1977; 1977, p341-378, 38p
Autor:
Noll, C.G., Lawless, P.A.
Publikováno v:
Proceedings Electrical Overstress/Electrostatic Discharge Symposium; 1997, p195-204, 10p