Zobrazeno 1 - 10
of 77
pro vyhledávání: '"E. Ching-Prado"'
Publikováno v:
Ferroelectrics. 598:1-15
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93ebac172940d21ece9a46ecefddf6c1
https://doi.org/10.1080/00150193.2022.2102816
https://doi.org/10.1080/00150193.2022.2102816
Autor:
J.C. Krause, Hector Miranda, E. Ching-Prado, C. A. Samudio Pérez, S. Velumani, Elida de Obaldia, Francis D’ Souza
Publikováno v:
Journal of Materials Science: Materials in Electronics. 30:15563-15581
Thin films of SnO2:F (FTO) were deposited on glass substrates using the spray pyrolysis technique. Tin dichloride (SnCl2·2H2O) was used as a precursor in the starting solution. The first group of samples was prepared adding ammonium fluoride (NH4F)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94e79c2dc0312f391138df3850a3946b
https://doi.org/10.1007/s10854-019-01933-6
https://doi.org/10.1007/s10854-019-01933-6
Autor:
E. Ching-Prado
Publikováno v:
Ferroelectrics. 535:171-182
The optimization of a BaTiO3 crystal unit cell was realized with the WC and VdW-DF-C09 exchange-correlation functional, under different hydrostatic pressures from –10 to 10 GPa with step si...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c0980a5c30a457968b739d303170f24
https://doi.org/10.1080/00150193.2018.1474664
https://doi.org/10.1080/00150193.2018.1474664
Publikováno v:
Journal of Materials Science: Materials in Electronics. 29:15423-15435
The structural, electronic band structure and optical properties of SnO2 and SnO2:F are investigated as a function of fluorine (F) concentration by first-principles calculation using PBE0 hybrid exchange–correlation functional. Various supercells w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d0e2e6e725fe4901f57ea7fdbf7eb7c
https://doi.org/10.1007/s10854-018-9067-3
https://doi.org/10.1007/s10854-018-9067-3
Publikováno v:
Journal of Materials Science: Materials in Electronics. 29:15299-15306
Thin film of SnO2:F was prepared by spray pyrolysis technique on glass substrate. Surface Morphology, using scanning electron microscope, shows micrograph image with grains size distribution between 16 and 380 nm. Structural characterization by XRD i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a29776add9d1ffaa89c2d31cf04186ba
https://doi.org/10.1007/s10854-018-8795-8
https://doi.org/10.1007/s10854-018-8795-8
Autor:
Hector Miranda, E. Ching-Prado
Publikováno v:
2019 7th International Engineering, Sciences and Technology Conference (IESTEC).
A thin film of SnO2:F (FTO) semiconductor was deposited on a glass substrate using the spray pyrolysis technique. In the sample preparation, a solution of tin dichloride SnCl2·2H2O to which was added ammonium fluoride (0.15 wt. NH4F) was used in ord
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0846919acfdc2faafb066bc78040ff95
https://doi.org/10.1109/iestec46403.2019.00027
https://doi.org/10.1109/iestec46403.2019.00027
Publikováno v:
2019 7th International Engineering, Sciences and Technology Conference (IESTEC).
Thin films of SnO2 (TO) and SnO2: F (FTO) were prepared by spray pyrolysis technique on glass substrate. The UV-visible spectra show well-defined interference fringes and an average transmittance in the visible region of about 74 and 81% for TO and F
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ef311ae8ee6304c22f5c98f180641f7
https://doi.org/10.1109/iestec46403.2019.00026
https://doi.org/10.1109/iestec46403.2019.00026
Publikováno v:
MRS Advances. 1:3133-3138
Thin films of TiO2/SnO2:F multilayers were prepared by spray pyrolysis technique on glass substrate. The samples were prepared using titanium (IV) isopropoxide 98%, ammonium fluoride and tin(II) chloride dehydrate extra pure as precursor materials. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5491871470f3da1b8eea3d0e2183aadb
https://doi.org/10.1557/adv.2016.281
https://doi.org/10.1557/adv.2016.281
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