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GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal

Autor: E. Canato, Gaudenzio Meneghesso, Kai Cheng, Matteo Meneghini, Farid Medjdoub, Idriss Abid

Publikováno v: Applied Physics Express
Applied Physics Express, 2021, 14 (3), pp.036501. ⟨10.35848/1882-0786/abdca0⟩
Applied Physics Express, IOPScience-Japan Society of Applied Physics, 2021, 14 (3), pp.036501. ⟨10.35848/1882-0786/abdca0⟩

We report on the demonstration of low trapping effects above 1200 V of GaN-on-silicon transistors using a local substrate removal (LSR) followed by a thick backside ultra-wide-bandgap AlN deposition. Substrate ramp measurements show reduced hysteresi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a48aa69bc11b1a6e2b6b6e0784583cdc
https://hal.science/hal-03113165

Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions

Autor: Matteo Meneghini, A. Barbato, C. De Santi, Gaudenzio Meneghesso, E. Canato, A. Stockman, A. Banerjee, F. Masin, E. Zanonivl, Peter Moens

Publikováno v: IRPS

This paper reports a detailed analysis of the performance and stability of E-mode GaN HEMTs under soft and hard switching conditions. We developed a novel on-wafer setup that controls the overlapping between the gate and drain pulses and, simultaneou

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f0c7b5ad3e253670aa11fdf313734604
https://doi.org/10.1109/irps45951.2020.9129116

Degradation physics of GaN-based lateral and vertical devices

Autor: F. Masin, Elena Fabris, Marco Barbato, Matteo Borga, Carlo De Santi, A. Nardo, E. Canato, Gaudenzio Meneghesso, F. Chiocchetta, Enrico Zanoni, A. Barbato, Fabiana Rampazzo, Alaleh Tajalli, Maria Ruzzarin, Matteo Meneghini

Publikováno v: Gallium Nitride Materials and Devices XIV.

This paper reviews the most relevant mechanisms responsible for the degradation of GaN-based lateral and vertical electron devices. These components are almost ideal for application in power electronics, but the presence of semiconductor defects and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::72268f9924b51f57d8b65b5f68d4e15f
https://doi.org/10.1117/12.2511145

Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment

Autor: Gaudenzio Meneghesso, D. Benazzi, E. Canato, Enrico Zanoni, Joff Derluyn, Idriss Abid, Roland Püsche, Farid Medjdoub, Matteo Meneghini, Matteo Borga

Publikováno v: Microelectronics Reliability
Microelectronics Reliability, 2019, 100-101, pp.113461. ⟨10.1016/j.microrel.2019.113461⟩
2019 ESREF proceeding
30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep 2019, Toulouse, France
Microelectronics Reliability, Elsevier, 2019, 100-101, pp.113461. ⟨10.1016/j.microrel.2019.113461⟩
Microelectronics Reliability, Elsevier, 2019, pp.113461. ⟨10.1016/j.microrel.2019.113461⟩

International audience; The aim of this work is to investigate the breakdown mechanisms of the layers constituting the vertical buffer of GaN-on-Si HEMTs; in addition, for the first time we demonstrate that the breakdown field of the AlN nucleation l

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6dc525e4bc75a6dcaf8266c9775456ae
https://hal.science/hal-02356751/file/1-s2.0-S0026271419305189-main.pdf