Výsledky vyhledávání - "E. C. Larkins"

The impact of nonequilibrium gain in a spectral laser diode model

Autor: P. J. Bream, J. J. Lim, S. Bull, A. V. Andrianov, S. Sujecki, E. C. Larkins

Publikováno v: Optical and Quantum Electronics. 38:1019-1027

We present results from an efficient, self-consistent spectral laser model, which incorporates nonequilibrium gain and is suitable for the routine simulation of quantum well laser diodes. Nonequilibrium gain is calculated using a dynamic gain model,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ae613c789a499aa60cb855fc7ea535e3
https://doi.org/10.1007/s11082-006-9017-9

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Impurity free selective interdiffusion of pseudomorphic InyGa1−yAs/GaAs multiple quantum well laser and modulator structures

Autor: John D. Ralston, J. Wagner, E. C. Larkins, W. Rothemund, M. Baeumler, G. Flemig, S. Bürkner

Publikováno v: Materials Science and Technology. 11:840-844

The cap layer dependence and selectivity of impurity freeinterdiffusion in molecular beam epitaxially grown pseudomorphic InyGa1−yAs/GaAs multiple quantum well structures with y=0·2 and 0·35 have been studied. The influence of the cap layer compo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c33b1589c6dba31e4f845f4a93125b7e
https://doi.org/10.1179/mst.1995.11.8.840

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Diode Laser Structures for High-Speed Direct Modulation and Monolithic Multi-Wavelength Transmitter OEIC’s

Autor: J. Rosenzweig, E. C. Larkins, S. Bürkner, W. Bronner, J. D. Ralston, S. Weisser, J. Hornung, J. Fleissner, R.E. Sah

Publikováno v: Ultrafast Electronics and Optoelectronics.

The successful application of direct laser modulation for very-high-speed digital transmission or microwave/millimeter-wave analog optical links requires: reductions in the drive currents required to achieve high modulation bandwidths, increases in t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a9e1866428167c934d610c1a55d7b59c
https://doi.org/10.1364/ueo.1995.uma2

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Erratum: Study of GaN thin layers subjected to high-temperature rapid thermal annealing [Semiconductors 32, No. 10, 1048 (October 1998)]

Autor: N. I. Katsavets, G. M. Laws, I. Harrison, E. C. Larkins, T. M. Benson, T. S. Cheng, C. T. Foxon

Publikováno v: Semiconductors. 32:1256-1256

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f2617cecc1d8e037a1966f51f2d09eec
https://doi.org/10.1134/1.1187604

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Akademický článek

Photoluminescence from self-assembled GaAs inclusions embedded in a GaN host crystal.

Autor: A. V. Andrianov, S. V. Novikov, T. Li, R. Xia, S. Bull, I. Harrison, E. C. Larkins, C. T. Foxon

Publikováno v: Physica Status Solidi (B); Jul2003, Vol. 238 Issue 1, p204, 9p

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