Zobrazeno 1 - 6
of 6
pro vyhledávání: '"E. C. G. Kirk"'
Publikováno v:
MRS Proceedings. 199
A new technique using a focused ion beam has been developed for the fabrication of transmission electron microscopy specimens in pre-selected regions. The method has been proven in the fabrication of both cross-sectional and planar specimens, with no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db022fdbfe4ec9270b4d216bb579945f
https://doi.org/10.1557/proc-199-205
https://doi.org/10.1557/proc-199-205
Publikováno v:
Journal of Materials Science Letters. 7:39-41
Strong image contrast from ion channelling has been observed in gold specimens in a high-resolution scanning ion microscope. This contrast is seen to persist after sputtering, and this effect has been used to investigate simultaneously the comparativ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16e66ae8b5421cca18d59398e0f64161
https://doi.org/10.1007/bf01729909
https://doi.org/10.1007/bf01729909
Publikováno v:
Electronics Letters. 23:585-586
Strong voltage contrast effects have been observed in scanning ion microscopy of integrated circuits. The ion beam has also been used to cut microsections in integrated circuits, with precise control of position and depth. The voltage distributions i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::021dab03e746a819b5bc2d5a48ce54c8
https://doi.org/10.1049/el:19870420
https://doi.org/10.1049/el:19870420
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 6:1026
A scanning ion microscope has been applied to the examination of microcircuits. Highly localized sputtering with the ion beam can be used for cutting microsections, positioned with submicrometer accuracy, across selected features of semiconductor dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afc746cb0d7dc753481397f45a283799
https://doi.org/10.1116/1.584341
https://doi.org/10.1116/1.584341
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 6:1940
Structures fabricated during the development of a process for making three‐dimensionally interconnected integrated circuits using electron beam recrystallization of silicon on insulator have been microsectioned and examined in the scanning ion micr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13d5a21ee2f9a05728ad287b3ef7d3d1
https://doi.org/10.1116/1.584137
https://doi.org/10.1116/1.584137