Zobrazeno 1 - 10
of 182
pro vyhledávání: '"E. C. F. da Silva"'
Publikováno v:
Superlattices and Microstructures. 104:232-239
We developed a method to calculate the dark current of quantum-well infrared photodetectors without the need to fit any experimental data or to perform extra transport measurements on other samples. The temperature range of the calculations was exten
Autor:
H. Iwamoto, E. C. F. da Silva, Edson Laureto, M.A.T. da Silva, A. A. Quivy, Ivan Frederico Lupiano Dias, V. M. de Aquino
Publikováno v:
Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual)
Universidade de São Paulo (USP)
instacron:USP
Universidade de São Paulo (USP)
instacron:USP
In the present paper it is demonstrated that the bound electronic states of multiple quantum wells structures may be calculated very efficiently by expanding their eigenstates in terms of the eigenfunctions of a particle in a box. The bound states of
Publikováno v:
Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual)
Universidade de São Paulo (USP)
instacron:USP
Universidade de São Paulo (USP)
instacron:USP
We report on a high responsivity at zero bias in infrared photodetectors based on InAlAs quantum dots due to the formation of an Al-rich wetting layer which acts as an electron barrier. This layer has a larger bandgap and results from the low segrega
Autor:
R R O Morais, Sidney A. Lourenço, José Leonil Duarte, A. A. Quivy, Ivan Frederico Lupiano Dias, Edson Laureto, E. C. F. da Silva
Publikováno v:
Brazilian Journal of Physics. 40:15-21
In this work we report on a comparison of some theoretical models usually used to fit the dependence on temperature of the fundamental energy gap of semiconductor materials. We used in our investigations the theoretical models of Vi˜ na, P¨ assler-
Publikováno v:
International Journal of Quantum Chemistry. 36:693-699
The Green's function technique within the framework of a valence-force-field Hamiltonian has been used to study the vibrational properties of the donor–hydrogen complexes, for the donors P, As, and Sb in silicon. The A1 and E vibrational energies o
Autor:
F. A. Marcus, Marisa Roberto, Tiago Kroetz, Iberê L. Caldas, Ricardo L. Viana, E. C. F. da Silva
Publikováno v:
Computer Physics Communications. 180:642-650
For magnetically confined plasmas in tokamaks, we have numerically investigated how Lagrangian chaos at the plasma edge affects the plasma confinement. Initially, we have considered the chaotic motion of particles in an equilibrium electric field wit
Publikováno v:
Journal of Crystal Growth. 278:103-107
Uncapped InAs/GaAs quantum dots with an average height of 14 nm were obtained combining a low growth rate (0.01 ML/s) and a high substrate temperature (520 °C) during molecular beam epitaxy of InAs on GaAs(0 0 1). This achievement of a very narrow d
Publikováno v:
Brazilian Journal of Physics. 34:1759-1765
The structure of magnetic field lines in a tokamak with reversed magnetic shear is investigated by means of analytically derived area-preserving non-twist Poincare maps. The basic configuration is the magnetic field produced by an ergodic limiter, su
Publikováno v:
Physica A: Statistical Mechanics and its Applications. 342:363-369
We investigated the structure of magnetic field lines in a tokamak with reversed magnetic shear and non-symmetric perturbations by means of analytically derived area-preserving non-twist Poincare maps. The maps are used to study magnetic island dimer
Publikováno v:
physica status solidi (c). 1:S133-S140
We report on the optical and morphological properties of self-assembled InAs quantum dots deposited on GaAs(001) substrates by molecular beam epitaxy using a combination of extreme growth combinations as low InAs growth rate, high-temperature InAs de